Formation of nickel silicide on nitrogen ion implanted silicon

L. W. Cheng, J. Y. Chen, J. C. Chen, S. L. Cheng, L. J. Chen, B. Y. Tsui

研究成果: 書貢獻/報告類型會議論文篇章同行評審

5 引文 斯高帕斯(Scopus)

摘要

The self-aligned-silicidation technique has become a crucial part of ultra-high speed CMOS technologies. Many studies on NiSi have been reported recently. NiSi possesses many advantages and appears to be a suitable candidate to replace TiSi2 in future ULSI devices. Nitrogen ion implantation has been used to suppress the boron and arsenic diffusion as well as hot-carrier degradation. In this paper, the formation of Nickel silicides on nitrogen ion implanted silicon is investigated. The phase formation of nickel silicides on nitrogen implanted (001) Si was suppressed and shifted to a higher temperature compared to that of blank sample. The presence of nitrogen ion was found to improve the crystallinity of epitaxial NiSi2. The effects of nitrogen on nickel silicide formation become more pronounced with the increase in the dose of nitrogen implantation.

原文???core.languages.en_GB???
主出版物標題Proceedings of the International Conference on Ion Implantation Technology
發行者IEEE
頁面1002-1005
頁數4
ISBN(列印)078034538X
出版狀態已出版 - 1999
事件Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) - Kyoto, Jpn
持續時間: 22 6月 199826 6月 1998

出版系列

名字Proceedings of the International Conference on Ion Implantation Technology
2

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???event.eventtypes.event.conference???Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)
城市Kyoto, Jpn
期間22/06/9826/06/98

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