Formation of Ni silicides on (001)Si with a thin interposing Pt layer

L. W. Cheng, S. L. Cheng, L. J. Chen, H. C. Chien, H. L. Lee, F. M. Pan

研究成果: 雜誌貢獻會議論文同行評審

37 引文 斯高帕斯(Scopus)


An experimental study is conducted which shows that a thin interposing Pt layer was found to act as a diffusion barrier and suppress the diffusion of Ni atoms effectively at temperatures below 500 °C. It indicates that NiSi phase can be stabilized by the presence of a thin Pt layer and the thermal stability of NiSi was improved considerably. The sheet resistance maintained the same low level in a wide temperature range. NiSi was found to be the only silicide phase for the Ni/Pt bilayer on (001)Si samples after annealing at 500-800 °C.

頁(從 - 到)1176-1179
期刊Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
發行號4 I
出版狀態已出版 - 7月 2000
事件46th National Symposium of the American Vacuum Society - Seatlle, WA, USA
持續時間: 25 10月 199929 10月 1999


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