Formation of Ni silicides on (001)Si with a thin interposing Pt layer

L. W. Cheng; S. L. Cheng; L. J. Chen; H. C. Chien; H. L. Lee; F. M. Pan

doi:10.1116/1.582321

Formation of Ni silicides on (001)Si with a thin interposing Pt layer

L. W. Cheng, S. L. Cheng, L. J. Chen, H. C. Chien, H. L. Lee, F. M. Pan

化學工程與材料工程學系

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

37 引文斯高帕斯（Scopus）

摘要

An experimental study is conducted which shows that a thin interposing Pt layer was found to act as a diffusion barrier and suppress the diffusion of Ni atoms effectively at temperatures below 500 °C. It indicates that NiSi phase can be stabilized by the presence of a thin Pt layer and the thermal stability of NiSi was improved considerably. The sheet resistance maintained the same low level in a wide temperature range. NiSi was found to be the only silicide phase for the Ni/Pt bilayer on (001)Si samples after annealing at 500-800 °C.

原文	???core.languages.en_GB???
頁（從 - 到）	1176-1179
頁數	4
期刊	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
卷	18
發行號	4 I
DOIs	https://doi.org/10.1116/1.582321
出版狀態	已出版 - 7月 2000
事件	46th National Symposium of the American Vacuum Society - Seatlle, WA, USA 持續時間: 25 10月 1999 → 29 10月 1999

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10.1116/1.582321

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abstract = "An experimental study is conducted which shows that a thin interposing Pt layer was found to act as a diffusion barrier and suppress the diffusion of Ni atoms effectively at temperatures below 500 °C. It indicates that NiSi phase can be stabilized by the presence of a thin Pt layer and the thermal stability of NiSi was improved considerably. The sheet resistance maintained the same low level in a wide temperature range. NiSi was found to be the only silicide phase for the Ni/Pt bilayer on (001)Si samples after annealing at 500-800 °C.",

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AU - Cheng, L. W.

AU - Cheng, S. L.

AU - Chen, L. J.

AU - Chien, H. C.

AU - Lee, H. L.

AU - Pan, F. M.

PY - 2000/7

Y1 - 2000/7

N2 - An experimental study is conducted which shows that a thin interposing Pt layer was found to act as a diffusion barrier and suppress the diffusion of Ni atoms effectively at temperatures below 500 °C. It indicates that NiSi phase can be stabilized by the presence of a thin Pt layer and the thermal stability of NiSi was improved considerably. The sheet resistance maintained the same low level in a wide temperature range. NiSi was found to be the only silicide phase for the Ni/Pt bilayer on (001)Si samples after annealing at 500-800 °C.

AB - An experimental study is conducted which shows that a thin interposing Pt layer was found to act as a diffusion barrier and suppress the diffusion of Ni atoms effectively at temperatures below 500 °C. It indicates that NiSi phase can be stabilized by the presence of a thin Pt layer and the thermal stability of NiSi was improved considerably. The sheet resistance maintained the same low level in a wide temperature range. NiSi was found to be the only silicide phase for the Ni/Pt bilayer on (001)Si samples after annealing at 500-800 °C.

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DO - 10.1116/1.582321

M3 - 會議論文

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4 I

T2 - 46th National Symposium of the American Vacuum Society

Y2 - 25 October 1999 through 29 October 1999

ER -

Formation of Ni silicides on (001)Si with a thin interposing Pt layer

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