摘要
An experimental study is conducted which shows that a thin interposing Pt layer was found to act as a diffusion barrier and suppress the diffusion of Ni atoms effectively at temperatures below 500 °C. It indicates that NiSi phase can be stabilized by the presence of a thin Pt layer and the thermal stability of NiSi was improved considerably. The sheet resistance maintained the same low level in a wide temperature range. NiSi was found to be the only silicide phase for the Ni/Pt bilayer on (001)Si samples after annealing at 500-800 °C.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 1176-1179 |
頁數 | 4 |
期刊 | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
卷 | 18 |
發行號 | 4 I |
DOIs | |
出版狀態 | 已出版 - 7月 2000 |
事件 | 46th National Symposium of the American Vacuum Society - Seatlle, WA, USA 持續時間: 25 10月 1999 → 29 10月 1999 |