High-quality, thin relaxed Si0.8Ge0.2 layers grown on Si(1 0 0) by ultrahigh-vacuum chemical vapor deposition (UHVCVD) have been formed with hydrogen (H)-implantation and subsequent thermal annealing. H-implantation was used to introduce a layer with a high density of defects (cavities) below a 200-nm-thick strained Si0.8Ge0.2. The peak of the implanted profile was located just ∼50 nm below the Si 0.8Ge0.2/Si interface. The dependence of residual strain in pseudomorphic Si0.8Ge0.2 layer on the annealing temperature has been investigated. By adjusting the dose of H-implantation and the subsequent annealing conditions, almost relaxed (∼95%) Si 0.8Ge0.2 layers with a smooth surface were achieved. The method provides a simple approach for the formation of thin relaxed Si 0.8Ge0.2 with reduction in surface roughness for advanced complementary metal-oxide-semiconductor electronic devices. Published by Elsevier B.V.
|頁（從 - 到）||217-222|
|期刊||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|出版狀態||已出版 - 8月 2005|
|事件||Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004 - |
持續時間: 25 10月 2004 → 27 10月 2004