Epitaxial β-FeSi2 nanodots were grown on strained Si/Si0.8Ge0.2 (001) substrates by solid phase epitaxy (SPE) method. High quality β-FeSi2 nanodots were grown at 800°C by employing strained Si/Si0.8Ge0.2 substrates, owing to a decrease of the in-plane lattice mismatch between the lattice parameters of the β-FeSi2 and  directions and that of Si substrate. Ordered β-FeSi2 arrays along 〈110〉 direction were observed to form on surfaces of strained Si/Si 0.8Ge0.2 substrate. It is shown that dislocation slip originated from compositionally graded Si1-xGex layers can produce local surface-strain and local thickness variation. The surface features are used for the fabrication of epitaxial β-FeSi2 nanostructures on strained Si/Si0.8Ge0.2 substrate.
|頁（從 - 到）||44-47|
|期刊||Thin Solid Films|
|出版狀態||已出版 - 2 8月 2004|
|事件||Proceedings of Symposium on Semiconducting Silicides - Yokohama, Japan|
持續時間: 8 10月 2003 → 13 10月 2003