Formation of epitaxial β-FeSi2 nanodots array on strained Si/Si0.8Ge0.2 (001) substrate

H. C. Chen, K. F. Liao, S. W. Lee, S. L. Cheng, L. J. Chen

研究成果: 雜誌貢獻會議論文同行評審

9 引文 斯高帕斯(Scopus)


Epitaxial β-FeSi2 nanodots were grown on strained Si/Si0.8Ge0.2 (001) substrates by solid phase epitaxy (SPE) method. High quality β-FeSi2 nanodots were grown at 800°C by employing strained Si/Si0.8Ge0.2 substrates, owing to a decrease of the in-plane lattice mismatch between the lattice parameters of the β-FeSi2 [001]and [010] directions and that of Si substrate. Ordered β-FeSi2 arrays along 〈110〉 direction were observed to form on surfaces of strained Si/Si 0.8Ge0.2 substrate. It is shown that dislocation slip originated from compositionally graded Si1-xGex layers can produce local surface-strain and local thickness variation. The surface features are used for the fabrication of epitaxial β-FeSi2 nanostructures on strained Si/Si0.8Ge0.2 substrate.

頁(從 - 到)44-47
期刊Thin Solid Films
出版狀態已出版 - 2 8月 2004
事件Proceedings of Symposium on Semiconducting Silicides - Yokohama, Japan
持續時間: 8 10月 200313 10月 2003


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