@inproceedings{89dd6471b4d64232865c4a0f10c3cd73,
title = "First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability",
abstract = "For the first time, the ion-vacancy-based bipolar RRAM has been demonstrated on HKMG stack of FEOL logic 14nm FinFET. A unit cell with two identical FinFETs, one serves as a control transistor and the other one is the storage with resistance switching. It is performed by the edge tunneling and with bipolar switching. More importantly, the sneak path issue in an AND-type array based on this FinFET unit cell has been thoroughly investigated. To solve sneak path issue, a new active-fin-isolation (AFI) of FinFET in an AND-type array was proposed. This new AFI effectively increases the S/N margin of 103 and significantly reduces the standby power of 30% and active power of 99%, compared to original AND-type array. This work provides a promising candidate for the embedded FLASH memory on FinFET platform featuring fully-CMOS compatible integration and low cost solution in the more-than-Moore era.",
author = "Hsieh, {E. R.} and Kuo, {Y. C.} and Cheng, {C. H.} and Kuo, {J. L.} and Jiang, {M. R.} and Lin, {J. L.} and Cheng, {H. W.} and Chung, {Steve S.} and Liu, {C. H.} and Chen, {T. P.} and Yeah, {Y. H.} and Chen, {T. J.} and Osbert Cheng",
note = "Publisher Copyright: {\textcopyright} 2017 JSAP.; 37th Symposium on VLSI Technology, VLSI Technology 2017 ; Conference date: 05-06-2017 Through 08-06-2017",
year = "2017",
month = jul,
day = "31",
doi = "10.23919/VLSIT.2017.7998204",
language = "???core.languages.en_GB???",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "T72--T73",
booktitle = "2017 Symposium on VLSI Technology, VLSI Technology 2017",
}