Fin-TFET: Design of FinFET-based Tunneling FET with Face-tunneling Mechanism

Mu Ying Lee, C. H. Chiu, E. R. Hsieh, G. L. Luo, J. C. Guo, Steve S. Chung

研究成果: 書貢獻/報告類型會議論文篇章同行評審

1 引文 斯高帕斯(Scopus)

摘要

A novel low voltage FinFET-based tunneling FET (FinTFET) with face-tunneling mechanism and Ge/SiGe material is proposed in this paper. The proposed device structure enhances the on-state drive current at low Vdd and also provides lower off-state leakage current, steeper sub-threshold slope, higher Ion/Ioff ratio, and smaller parasitic capacitance compared to the other TFETs. These advantages are attributed to a larger tunneling area and proper use of the SiGe-channel, i.e., the suppression of the leakage current, and the channel region with small bandgap Ge which can enhance the tunneling current. Furthermore, a novel hybrid 6T SRAM is proposed and verified to reduce the read disturb and enhance the RSNM/WSNM of SRAM.

原文???core.languages.en_GB???
主出版物標題2021 Silicon Nanoelectronics Workshop, SNW 2021
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9784863487819
DOIs
出版狀態已出版 - 2021
事件26th Silicon Nanoelectronics Workshop, SNW 2021 - Virtual, Online, Japan
持續時間: 13 6月 2021 → …

出版系列

名字2021 Silicon Nanoelectronics Workshop, SNW 2021

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???26th Silicon Nanoelectronics Workshop, SNW 2021
國家/地區Japan
城市Virtual, Online
期間13/06/21 → …

指紋

深入研究「Fin-TFET: Design of FinFET-based Tunneling FET with Face-tunneling Mechanism」主題。共同形成了獨特的指紋。

引用此