The feasibility of using plasma enhanced chemical vapor deposition TEOS (PETEOS) oxide and associated chemical mechanical polishing (CMP)to form a flat layer on the surface of a processed VLSI bulk Si wafer for direct bonding was evaluated. Results show that the PETEOS oxide can be used to create a very strong bond after annealing at temperatures as low as 300 °C.
|出版狀態||已出版 - 1996|
|事件||Proceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA|
持續時間: 30 9月 1996 → 3 10月 1996
|???event.eventtypes.event.conference???||Proceedings of the 1996 IEEE International SOI Conference|
|城市||Sanibel Island, FL, USA|
|期間||30/09/96 → 3/10/96|