Fault Modeling and Testing of RRAM-based Computing-In Memories

Yu Cheng Yang; Jin Fu Li

doi:10.1109/ITCAsia55616.2022.00012

Fault Modeling and Testing of RRAM-based Computing-In Memories

Yu Cheng Yang, Jin Fu Li

電機工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

Resistive random access memory (RRAM) is one promising nonvolatile memory. It also is a good candidate for realizing computing-in memories. In this paper, we perform fault modeling for 1T1R RRAM-based computing-in memories (CIMs). Although there are existing works reported fault modeling and testing for RRAMs and RRAM-based CIMs, they do the fault analysis based on bit-oriented array organization. Here we inject intra-cell and inter-cell electrical defects in a word-oriented cell array for the fault analysis. Fault analysis results show that a RRAM-based CIM may have computing faults and data dependent faults in addition to conventional RRAM faults. We also propose a march test March-R11N for the 1T1R RRAM-based CIMs. Analysis results show that March-R11N requires 11N test complexity to cover all the typical faults and defined faults of a 1T1R RRAM-based CIM with N words.

原文	???core.languages.en_GB???
主出版物標題	Proceedings - 2022 IEEE International Test Conference in Asia, ITC-Asia 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	7-12
頁數	6
ISBN（電子）	9781665455237
DOIs	https://doi.org/10.1109/ITCAsia55616.2022.00012
出版狀態	已出版 - 2022
事件	6th IEEE International Test Conference in Asia, ITC-Asia 2022 - Taipei, Taiwan 持續時間: 24 8月 2022 → 26 8月 2022

出版系列

名字	Proceedings - 2022 IEEE International Test Conference in Asia, ITC-Asia 2022

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	6th IEEE International Test Conference in Asia, ITC-Asia 2022
國家/地區	Taiwan
城市	Taipei
期間	24/08/22 → 26/08/22

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10.1109/ITCAsia55616.2022.00012

應用於運算記憶體之前瞻可靠度及測試框架-總計畫暨子計畫一：應用於運算記憶體之測試技術
Li, J.-F. (PI)
1/08/22 → 31/07/23
研究計畫: Research

引用此

Yang, Y. C., & Li, J. F. (2022). Fault Modeling and Testing of RRAM-based Computing-In Memories. 於 Proceedings - 2022 IEEE International Test Conference in Asia, ITC-Asia 2022 (頁 7-12). (Proceedings - 2022 IEEE International Test Conference in Asia, ITC-Asia 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ITCAsia55616.2022.00012

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title = "Fault Modeling and Testing of RRAM-based Computing-In Memories",

abstract = "Resistive random access memory (RRAM) is one promising nonvolatile memory. It also is a good candidate for realizing computing-in memories. In this paper, we perform fault modeling for 1T1R RRAM-based computing-in memories (CIMs). Although there are existing works reported fault modeling and testing for RRAMs and RRAM-based CIMs, they do the fault analysis based on bit-oriented array organization. Here we inject intra-cell and inter-cell electrical defects in a word-oriented cell array for the fault analysis. Fault analysis results show that a RRAM-based CIM may have computing faults and data dependent faults in addition to conventional RRAM faults. We also propose a march test March-R11N for the 1T1R RRAM-based CIMs. Analysis results show that March-R11N requires 11N test complexity to cover all the typical faults and defined faults of a 1T1R RRAM-based CIM with N words.",

keywords = "Resistive RAM, computing faults, computing-in memory, march test",

author = "Yang, {Yu Cheng} and Li, {Jin Fu}",

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Yang, YC & Li, JF 2022, Fault Modeling and Testing of RRAM-based Computing-In Memories. 於 Proceedings - 2022 IEEE International Test Conference in Asia, ITC-Asia 2022. Proceedings - 2022 IEEE International Test Conference in Asia, ITC-Asia 2022, Institute of Electrical and Electronics Engineers Inc., 頁 7-12, 6th IEEE International Test Conference in Asia, ITC-Asia 2022, Taipei, Taiwan, 24/08/22. https://doi.org/10.1109/ITCAsia55616.2022.00012

Fault Modeling and Testing of RRAM-based Computing-In Memories. / Yang, Yu Cheng; Li, Jin Fu.
Proceedings - 2022 IEEE International Test Conference in Asia, ITC-Asia 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 7-12 (Proceedings - 2022 IEEE International Test Conference in Asia, ITC-Asia 2022).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - Fault Modeling and Testing of RRAM-based Computing-In Memories

AU - Yang, Yu Cheng

AU - Li, Jin Fu

PY - 2022

Y1 - 2022

N2 - Resistive random access memory (RRAM) is one promising nonvolatile memory. It also is a good candidate for realizing computing-in memories. In this paper, we perform fault modeling for 1T1R RRAM-based computing-in memories (CIMs). Although there are existing works reported fault modeling and testing for RRAMs and RRAM-based CIMs, they do the fault analysis based on bit-oriented array organization. Here we inject intra-cell and inter-cell electrical defects in a word-oriented cell array for the fault analysis. Fault analysis results show that a RRAM-based CIM may have computing faults and data dependent faults in addition to conventional RRAM faults. We also propose a march test March-R11N for the 1T1R RRAM-based CIMs. Analysis results show that March-R11N requires 11N test complexity to cover all the typical faults and defined faults of a 1T1R RRAM-based CIM with N words.

AB - Resistive random access memory (RRAM) is one promising nonvolatile memory. It also is a good candidate for realizing computing-in memories. In this paper, we perform fault modeling for 1T1R RRAM-based computing-in memories (CIMs). Although there are existing works reported fault modeling and testing for RRAMs and RRAM-based CIMs, they do the fault analysis based on bit-oriented array organization. Here we inject intra-cell and inter-cell electrical defects in a word-oriented cell array for the fault analysis. Fault analysis results show that a RRAM-based CIM may have computing faults and data dependent faults in addition to conventional RRAM faults. We also propose a march test March-R11N for the 1T1R RRAM-based CIMs. Analysis results show that March-R11N requires 11N test complexity to cover all the typical faults and defined faults of a 1T1R RRAM-based CIM with N words.

KW - Resistive RAM

KW - computing faults

KW - computing-in memory

KW - march test

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T3 - Proceedings - 2022 IEEE International Test Conference in Asia, ITC-Asia 2022

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BT - Proceedings - 2022 IEEE International Test Conference in Asia, ITC-Asia 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th IEEE International Test Conference in Asia, ITC-Asia 2022

Y2 - 24 August 2022 through 26 August 2022

ER -

Fault Modeling and Testing of RRAM-based Computing-In Memories

摘要

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指紋

專案

應用於運算記憶體之前瞻可靠度及測試框架-總計畫暨子計畫一：應用於運算記憶體之測試技術

引用此