@inproceedings{1677dfa3c1004149a4173338c68d52d7,
title = "Fabrication/characterization of a pseudomorphic Ga0.1In0.9P/InP MESFET",
abstract = "A pseudomorphic Ga0.1In0.9P/InP MESFET grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) has been fabricated and characterized. The results indicated a transconductance of 66.7 ms/mm and a saturation drain current (Idss) of 55.6 mA have been achieved; furthermore, the Schottky barrier on InGaP as high as 0.67 eV can be obtained using Pt2Si as the gate material. For comparison, a conventional InP MESFET with 5 μm gate length has also been fabricated on InP epitaxial layer grown by low pressure metalorganic chemical vapor deposition on Fe-doped semi-insulating InP substrate. The transconductance and Idss were found to be 46.7 mS/mm and 43.1 mA at zero gate, respectively, for the depletion mode n-channel MESFET with Au as the gate metal; whereas, for the MESFET using Pt2Si as the gate metal, a transconductance of 40.3 mS/mm and a saturation drain current of 41.1 mA at zero gate bias have been obtained. The results indicated that Ga0.1In0.9P/InP MESFET has better performance than InP MESFET because of higher energy gap of Ga0.1In0.9P.",
author = "Feng, {M. S.} and Hsin, {Y. M.} and Wu, {C. H.}",
year = "1993",
doi = "10.1557/proc-300-61",
language = "???core.languages.en_GB???",
isbn = "1558991964",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "61--66",
booktitle = "III-V Electronic and Photonic Device Fabrication and Performance",
note = "Materials Research Society Spring Meeting ; Conference date: 12-04-1993 Through 15-04-1993",
}