Fabrication of vertically aligned silicon nanowire arrays and investigation on the formation of the nickel silicide nanowires

S. L. Cheng, C. H. Chung, H. C. Lee

研究成果: 書貢獻/報告類型會議論文篇章同行評審

2 引文 斯高帕斯(Scopus)

摘要

Large-area, vertically aligned silicon nanowire arrays have been successfully fabricated on (001)Si substrates via the redox reactions between silicon and silver ions in the aqueous solution of AgNO3/HF. From SEM and TEM observations, the typical widths of the synthesized SiNWs are in the range of 30-200 nm. The lengths of SiNWs could be tuned from several to tens of micrometers by adjusting the reaction temperatures and time. For the Ni thin films on Si nanowires samples, the growth of epitaxial NiSi2 was found to be more favorable for the samples with smaller nanowire widths. The epitaxial orientation relationship between the NiSi2 and Si nanowires was identified to be [10]NiSi2// [100]Si and (002)NiSi 2//(004)Si. The observed results present the exciting prospect that with appropriate controls, this approach could be applied to investigate the phase transformation and growth kinetics of other metal contacts or interconnects on Si substrates at the nanometer-scale.

原文???core.languages.en_GB???
主出版物標題IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
頁面121-124
頁數4
DOIs
出版狀態已出版 - 2007
事件IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
持續時間: 20 12月 200722 12月 2007

出版系列

名字IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
國家/地區Taiwan
城市Tainan
期間20/12/0722/12/07

指紋

深入研究「Fabrication of vertically aligned silicon nanowire arrays and investigation on the formation of the nickel silicide nanowires」主題。共同形成了獨特的指紋。

引用此