Fabrication of nano-cavity patterned sapphire substrate using self-assembly meshed Pt thin film on c-plane sapphire substrate

S. W. Huang, C. C. Chang, H. Y. Lin, X. F. Li, Y. C. Lin, C. Y. Liu

研究成果: 雜誌貢獻期刊論文同行評審

13 引文 斯高帕斯(Scopus)

摘要

In this work, a nano-cavity patterned sapphire substrate (nc-PSS) is fabricated by using a self-formed meshed Pt thin film on a c-plane sapphire substrate. The light output power of a GaN-based light emitting diode on the nc-PSS is 45% greater than that of a control light emitting diode that was prepared on a flat c-plane sapphire substrate (f-SS) wafer. The GaN-based light emitting diode that was prepared on the nc-PSS exhibited much less drooping than a GaN-based light-emitting diode that was prepared on a commercial semi-sphere patterned sapphire substrate (r-PSS), mainly because the voids that formed at the cavities at the GaN/nc-PSS interface buffered the stress in the GaN epi-layers that was imposed by the sapphire substrate.

原文???core.languages.en_GB???
頁(從 - 到)127-131
頁數5
期刊Thin Solid Films
628
DOIs
出版狀態已出版 - 30 4月 2017

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