摘要
In this work, a nano-cavity patterned sapphire substrate (nc-PSS) is fabricated by using a self-formed meshed Pt thin film on a c-plane sapphire substrate. The light output power of a GaN-based light emitting diode on the nc-PSS is 45% greater than that of a control light emitting diode that was prepared on a flat c-plane sapphire substrate (f-SS) wafer. The GaN-based light emitting diode that was prepared on the nc-PSS exhibited much less drooping than a GaN-based light-emitting diode that was prepared on a commercial semi-sphere patterned sapphire substrate (r-PSS), mainly because the voids that formed at the cavities at the GaN/nc-PSS interface buffered the stress in the GaN epi-layers that was imposed by the sapphire substrate.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 127-131 |
頁數 | 5 |
期刊 | Thin Solid Films |
卷 | 628 |
DOIs | |
出版狀態 | 已出版 - 30 4月 2017 |