@article{40b3d82eea0f4750a40414616d24b167,
title = "Fabrication of double-metal AC-coupled silicon microstrip detectors",
abstract = "The 8 x 4 cm2 single-sided double-metal p+ i n+ silicon microstrip detectors (SMDs) with coupling capacitors and polysilicon bias resistors were fabricated with the newly developed double-metal processing techniques with different inter-metal dielectrics. The results of using these processing techniques and some features of double-metal process are reported. The characteristics of polysilicon bias resistors obtained with BF2 ion-implantations having various doses and their effects on the leakage currents of SMDs have also been studied.",
keywords = "Double-metal, IMD (inter-metal dielectric), ONO (oxide nitride-oxide), PECVD (plasma-enhanced chemical vapor deposition), SMD (silicon microstrip detector), SOG (spin-on-glass)",
author = "Tsay, {Wen Chin} and Chen, {Yen Ann} and Laih, {Li Hong} and Hong, {Jyh Wong} and Chen, {Augustine E.} and Lin, {Willis T.} and Chang, {Yuan Hann} and Hou, {Suen R.} and Li, {Chung Ren} and Ting, {Hsien Jen} and Liang, {Wei Chen} and Tang, {Jyh Dong} and Cheng, {Caleb C.P.} and Chiang, {Song Tsang}",
note = "Funding Information: *Corresponding author. Tel.: f88h 3 4227151; +X66 3 41XGO; e-mall: mtchest i($mslR.hinet.net. {\textquoteright} This work was supported by I\iational Science Council of R.O.C. under the contracts NSC ~3-COOS-M-008-047 and NSC x5-2 1 I?-hl-ttox-021,",
year = "1998",
month = mar,
day = "1",
doi = "10.1016/S0168-9002(97)01196-0",
language = "???core.languages.en_GB???",
volume = "405",
pages = "13--19",
journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
issn = "0168-9002",
number = "1",
}