@article{d34ac2a7e7cf46088c0d273d3f426a17,
title = "Fabrication of a germanium quantum-dot single-electron transistor with large Coulomb-blockade oscillations at room temperature",
abstract = "The fabrication of a germanium quantum-dot (QD) single-electron transistor using complementary metal-oxide-semiconductor-compatible method was proposed. The tunneling currents through the Ge QD were simulated by the Anderson model with two energy levels. The total capacitance of the dot was calculated to be 2.13 aF. The analysis of the current-voltage characteristics indicated that the single-electron addition energy of the Ge QD was about 125 meV.",
author = "Li, {P. W.} and Liao, {W. M.} and Kuo, {David M.T.} and Lin, {S. W.} and Chen, {P. S.} and Lu, {S. C.} and Tsai, {M. J.}",
note = "Funding Information: The work at NCU was supported by the National Science Council of Republic of China under Contract No. NSC 92-2215-008-019, and the MOE Program for Promoting Academic Excellence of Universities under Grant No. 92-E-FA06-1-4.",
year = "2004",
month = aug,
day = "30",
doi = "10.1063/1.1785870",
language = "???core.languages.en_GB???",
volume = "85",
pages = "1532--1534",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "9",
}