Fabrication of 0.25 μm T-Gate AlInGaN/AlN/GaN HEMTs by I-Line Optical Lithography

Yi Zhen Liu, Wei Chih Ho, Indraneel Sanyal, Jen Inn Chyi

研究成果: 書貢獻/報告類型會議論文篇章同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this report, we demonstrate an optical lithography process to fabricate T-gate AlInGaN/AlN/GaN high electron mobility transistors (HEMTs) on Si substrates with gate length down to 0.25 μm. The gate foot is defined by backfilling and etching a SiNx layer with a 0.6 μm wide window. The backfilled SiNx layer serves not only as the spacer layer that results in a reduced gate foot, but also as a passivation layer for reducing surface trap states. The fabricated AIInGaN/AlN/GaN HEMTs exhibit IDSS of 537 mA/mm, transconductance of 439 mS/mm, current gain cut-off frequency (fT) of 58 GHz, and power gain cut-off frequency (fmax) of 73 GHz.

原文???core.languages.en_GB???
主出版物標題2019 Compound Semiconductor Week, CSW 2019 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728100807
DOIs
出版狀態已出版 - 5月 2019
事件2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan
持續時間: 19 5月 201923 5月 2019

出版系列

名字2019 Compound Semiconductor Week, CSW 2019 - Proceedings

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???2019 Compound Semiconductor Week, CSW 2019
國家/地區Japan
城市Nara
期間19/05/1923/05/19

指紋

深入研究「Fabrication of 0.25 μm T-Gate AlInGaN/AlN/GaN HEMTs by I-Line Optical Lithography」主題。共同形成了獨特的指紋。

引用此