Fabrication of 0.25 μm T-Gate AlInGaN/AlN/GaN HEMTs by I-Line Optical Lithography

Yi Zhen Liu; Wei Chih Ho; Indraneel Sanyal; Jen Inn Chyi

doi:10.1109/ICIPRM.2019.8819182

Fabrication of 0.25 μm T-Gate AlInGaN/AlN/GaN HEMTs by I-Line Optical Lithography

Yi Zhen Liu, Wei Chih Ho, Indraneel Sanyal, Jen Inn Chyi

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

In this report, we demonstrate an optical lithography process to fabricate T-gate AlInGaN/AlN/GaN high electron mobility transistors (HEMTs) on Si substrates with gate length down to 0.25 μm. The gate foot is defined by backfilling and etching a SiNx layer with a 0.6 μm wide window. The backfilled SiNx layer serves not only as the spacer layer that results in a reduced gate foot, but also as a passivation layer for reducing surface trap states. The fabricated AIInGaN/AlN/GaN HEMTs exhibit I_DSS of 537 mA/mm, transconductance of 439 mS/mm, current gain cut-off frequency (f_T) of 58 GHz, and power gain cut-off frequency (f_max) of 73 GHz.

原文	???core.languages.en_GB???
主出版物標題	2019 Compound Semiconductor Week, CSW 2019 - Proceedings
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781728100807
DOIs	https://doi.org/10.1109/ICIPRM.2019.8819182
出版狀態	已出版 - 5月 2019
事件	2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan 持續時間: 19 5月 2019 → 23 5月 2019

出版系列

名字	2019 Compound Semiconductor Week, CSW 2019 - Proceedings

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	2019 Compound Semiconductor Week, CSW 2019
國家/地區	Japan
城市	Nara
期間	19/05/19 → 23/05/19

存取文件

10.1109/ICIPRM.2019.8819182

引用此

Liu, Y. Z., Ho, W. C., Sanyal, I., & Chyi, J. I. (2019). Fabrication of 0.25 μm T-Gate AlInGaN/AlN/GaN HEMTs by I-Line Optical Lithography. 於 2019 Compound Semiconductor Week, CSW 2019 - Proceedings 文章 8819182 (2019 Compound Semiconductor Week, CSW 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2019.8819182

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title = "Fabrication of 0.25 μm T-Gate AlInGaN/AlN/GaN HEMTs by I-Line Optical Lithography",

abstract = "In this report, we demonstrate an optical lithography process to fabricate T-gate AlInGaN/AlN/GaN high electron mobility transistors (HEMTs) on Si substrates with gate length down to 0.25 μm. The gate foot is defined by backfilling and etching a SiNx layer with a 0.6 μm wide window. The backfilled SiNx layer serves not only as the spacer layer that results in a reduced gate foot, but also as a passivation layer for reducing surface trap states. The fabricated AIInGaN/AlN/GaN HEMTs exhibit IDSS of 537 mA/mm, transconductance of 439 mS/mm, current gain cut-off frequency (fT) of 58 GHz, and power gain cut-off frequency (fmax) of 73 GHz.",

keywords = "AlInGaN, GaN, HEMT, Optical lithography",

author = "Liu, {Yi Zhen} and Ho, {Wei Chih} and Indraneel Sanyal and Chyi, {Jen Inn}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Compound Semiconductor Week, CSW 2019 ; Conference date: 19-05-2019 Through 23-05-2019",

year = "2019",

month = may,

doi = "10.1109/ICIPRM.2019.8819182",

language = "???core.languages.en_GB???",

series = "2019 Compound Semiconductor Week, CSW 2019 - Proceedings",

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Liu, YZ, Ho, WC, Sanyal, I & Chyi, JI 2019, Fabrication of 0.25 μm T-Gate AlInGaN/AlN/GaN HEMTs by I-Line Optical Lithography. 於 2019 Compound Semiconductor Week, CSW 2019 - Proceedings., 8819182, 2019 Compound Semiconductor Week, CSW 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 Compound Semiconductor Week, CSW 2019, Nara, Japan, 19/05/19. https://doi.org/10.1109/ICIPRM.2019.8819182

Fabrication of 0.25 μm T-Gate AlInGaN/AlN/GaN HEMTs by I-Line Optical Lithography. / Liu, Yi Zhen; Ho, Wei Chih; Sanyal, Indraneel 等.
2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8819182 (2019 Compound Semiconductor Week, CSW 2019 - Proceedings).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - Fabrication of 0.25 μm T-Gate AlInGaN/AlN/GaN HEMTs by I-Line Optical Lithography

AU - Liu, Yi Zhen

AU - Ho, Wei Chih

AU - Sanyal, Indraneel

AU - Chyi, Jen Inn

PY - 2019/5

Y1 - 2019/5

N2 - In this report, we demonstrate an optical lithography process to fabricate T-gate AlInGaN/AlN/GaN high electron mobility transistors (HEMTs) on Si substrates with gate length down to 0.25 μm. The gate foot is defined by backfilling and etching a SiNx layer with a 0.6 μm wide window. The backfilled SiNx layer serves not only as the spacer layer that results in a reduced gate foot, but also as a passivation layer for reducing surface trap states. The fabricated AIInGaN/AlN/GaN HEMTs exhibit IDSS of 537 mA/mm, transconductance of 439 mS/mm, current gain cut-off frequency (fT) of 58 GHz, and power gain cut-off frequency (fmax) of 73 GHz.

AB - In this report, we demonstrate an optical lithography process to fabricate T-gate AlInGaN/AlN/GaN high electron mobility transistors (HEMTs) on Si substrates with gate length down to 0.25 μm. The gate foot is defined by backfilling and etching a SiNx layer with a 0.6 μm wide window. The backfilled SiNx layer serves not only as the spacer layer that results in a reduced gate foot, but also as a passivation layer for reducing surface trap states. The fabricated AIInGaN/AlN/GaN HEMTs exhibit IDSS of 537 mA/mm, transconductance of 439 mS/mm, current gain cut-off frequency (fT) of 58 GHz, and power gain cut-off frequency (fmax) of 73 GHz.

KW - AlInGaN

KW - GaN

KW - HEMT

KW - Optical lithography

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T3 - 2019 Compound Semiconductor Week, CSW 2019 - Proceedings

BT - 2019 Compound Semiconductor Week, CSW 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Compound Semiconductor Week, CSW 2019

Y2 - 19 May 2019 through 23 May 2019

ER -

Fabrication of 0.25 μm T-Gate AlInGaN/AlN/GaN HEMTs by I-Line Optical Lithography

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