Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

Chien Fong Lo; Chih Yang Chang; S. H. Chen; C. M. Chang; S. Y. Wang; J. I. Chyi; I. I. Kravchenko; S. J. Pearton; F. Ren

doi:10.1149/1.3629960

Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

Chien Fong Lo, Chih Yang Chang, S. H. Chen, C. M. Chang, S. Y. Wang, J. I. Chyi, I. I. Kravchenko, S. J. Pearton, F. Ren

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

摘要

A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In_0.52Al_0.48As/In_0.42Ga _0.58As_0.77Sb_0.23/In_0.53Ga _0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm²and a high dc current gain of 123.8 for a DHBT with a 0.65 x 8.65 μm² emitter area were obtained. A unity gain cut-off frequency (f_T) of 260 GHz and a maximum oscillation frequency (f_max) of 485 GHz at J_C = 302 kA/cm² were achieved.

原文	???core.languages.en_GB???
主出版物標題	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
發行者	Electrochemical Society Inc.
頁面	117-127
頁數	11
版本	6
ISBN（電子）	9781607682608
ISBN（列印）	9781566779067
DOIs	https://doi.org/10.1149/1.3629960
出版狀態	已出版 - 2011
事件	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States 持續時間: 9 10月 2011 → 14 10月 2011

出版系列

名字	ECS Transactions
號碼	6
卷	41
ISSN（列印）	1938-5862
ISSN（電子）	1938-6737

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???event.eventtypes.event.conference???	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
國家/地區	United States
城市	Boston, MA
期間	9/10/11 → 14/10/11

存取文件

10.1149/1.3629960

引用此

Lo, C. F., Chang, C. Y., Chen, S. H., Chang, C. M., Wang, S. Y., Chyi, J. I., Kravchenko, I. I., Pearton, S. J., & Ren, F. (2011). Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors. 於 State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 (6 編輯, 頁 117-127). (ECS Transactions; 卷 41, 編號 6). Electrochemical Society Inc.. https://doi.org/10.1149/1.3629960

@inproceedings{77947271d8c54bd18dec81707ea4096d,

title = "Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors",

abstract = "A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In0.52Al0.48As/In0.42Ga 0.58As0.77Sb0.23/In0.53Ga 0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm2and a high dc current gain of 123.8 for a DHBT with a 0.65 x 8.65 μm2 emitter area were obtained. A unity gain cut-off frequency (fT) of 260 GHz and a maximum oscillation frequency (fmax) of 485 GHz at JC = 302 kA/cm2 were achieved.",

author = "Lo, {Chien Fong} and Chang, {Chih Yang} and Chen, {S. H.} and Chang, {C. M.} and Wang, {S. Y.} and Chyi, {J. I.} and Kravchenko, {I. I.} and Pearton, {S. J.} and F. Ren",

year = "2011",

doi = "10.1149/1.3629960",

language = "???core.languages.en_GB???",

isbn = "9781566779067",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "6",

pages = "117--127",

booktitle = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53",

edition = "6",

note = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",

}

Lo, CF, Chang, CY, Chen, SH, Chang, CM, Wang, SY, Chyi, JI, Kravchenko, II, Pearton, SJ & Ren, F 2011, Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors. 於 State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6 edn, ECS Transactions, 編號 6, 卷 41, Electrochemical Society Inc., 頁 117-127, State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting, Boston, MA, United States, 9/10/11. https://doi.org/10.1149/1.3629960

Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors. / Lo, Chien Fong; Chang, Chih Yang; Chen, S. H. 等.
State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6. 編輯 Electrochemical Society Inc., 2011. p. 117-127 (ECS Transactions; 卷 41, 編號 6).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

AU - Lo, Chien Fong

AU - Chang, Chih Yang

AU - Chen, S. H.

AU - Chang, C. M.

AU - Wang, S. Y.

AU - Chyi, J. I.

AU - Kravchenko, I. I.

AU - Pearton, S. J.

AU - Ren, F.

PY - 2011

Y1 - 2011

N2 - A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In0.52Al0.48As/In0.42Ga 0.58As0.77Sb0.23/In0.53Ga 0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm2and a high dc current gain of 123.8 for a DHBT with a 0.65 x 8.65 μm2 emitter area were obtained. A unity gain cut-off frequency (fT) of 260 GHz and a maximum oscillation frequency (fmax) of 485 GHz at JC = 302 kA/cm2 were achieved.

AB - A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In0.52Al0.48As/In0.42Ga 0.58As0.77Sb0.23/In0.53Ga 0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm2and a high dc current gain of 123.8 for a DHBT with a 0.65 x 8.65 μm2 emitter area were obtained. A unity gain cut-off frequency (fT) of 260 GHz and a maximum oscillation frequency (fmax) of 485 GHz at JC = 302 kA/cm2 were achieved.

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U2 - 10.1149/1.3629960

DO - 10.1149/1.3629960

M3 - 會議論文篇章

AN - SCOPUS:84863129827

SN - 9781566779067

T3 - ECS Transactions

SP - 117

EP - 127

BT - State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53

PB - Electrochemical Society Inc.

T2 - State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting

Y2 - 9 October 2011 through 14 October 2011

ER -

Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

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