Experimental techniques on the understanding of the charge loss in a SONOS nitride-storage nonvolatile memory

E. R. Hsieh, H. T. Wang, Steve S. Chung, Wayne Chang, S. D. Wang, C. H. Chen

研究成果: 書貢獻/報告類型會議論文篇章同行評審

1 引文 斯高帕斯(Scopus)

摘要

The endurance and charge loss are the most critical issue in the design of a SONOS memory cell. The origin of the window closure and charge loss was partly caused by the electrons and holes mismatch along the channel lateral direction during the cycling. In this paper, two measurement techniques to observe the mismatch of programmed electrons and erased holes have been developed. It was demonstrated on an MTP (Multi-Time-Programming) SONOS flash memory. By observing the charge distribution, the mismatch which led to window closure and charge loss can be well understood, and better operating schemes can then be developed.

原文???core.languages.en_GB???
主出版物標題Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面38-42
頁數5
ISBN(電子)9781467382588
DOIs
出版狀態已出版 - 9 9月 2016
事件23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016 - Singapore, Singapore
持續時間: 18 7月 201621 7月 2016

出版系列

名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
2016-September

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???event.eventtypes.event.conference???23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016
國家/地區Singapore
城市Singapore
期間18/07/1621/07/16

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