@inproceedings{691a9b02090f4e25a70f2bd689d1a700,
title = "Experimental techniques on the understanding of the charge loss in a SONOS nitride-storage nonvolatile memory",
abstract = "The endurance and charge loss are the most critical issue in the design of a SONOS memory cell. The origin of the window closure and charge loss was partly caused by the electrons and holes mismatch along the channel lateral direction during the cycling. In this paper, two measurement techniques to observe the mismatch of programmed electrons and erased holes have been developed. It was demonstrated on an MTP (Multi-Time-Programming) SONOS flash memory. By observing the charge distribution, the mismatch which led to window closure and charge loss can be well understood, and better operating schemes can then be developed.",
keywords = "Random Telegraph Noise (RTN), SONOS flash memory, charge loss, endurance, gated-diode measurement, retention",
author = "Hsieh, {E. R.} and Wang, {H. T.} and Chung, {Steve S.} and Wayne Chang and Wang, {S. D.} and Chen, {C. H.}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016 ; Conference date: 18-07-2016 Through 21-07-2016",
year = "2016",
month = sep,
day = "9",
doi = "10.1109/IPFA.2016.7564243",
language = "???core.languages.en_GB???",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "38--42",
booktitle = "Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016",
}