Experimental I-V characteristics of AIGaAs/GaAs heterojunction bipolar transistors with very thin bases

Y. M. Hsin, D. P. Vu, P. M. Asbeck

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

Npn abrupt AlGaAs/GaAs heterojunction bipolar transistors with thin base widths (WB) down to 200Å have been fabricated for the first time, and their collector and base current-voltage characteristics have been studied. The experimental results show that the surface recombination base current and the base bulk recombination current are both significantly lower in 200Å base HBTs than in comparable devices with 500Å base width. For the thin base HBTS, the base bulk recombination current density is proportional to ~∼WB and the surface recombination current density is proportional to ∼WB2. The experiment also showed that the collector current across a thin p+ GaAs base is limited, as expected, by the thermal velocity of the electrons rather than by conventional diffusive transport.

原文???core.languages.en_GB???
頁(從 - 到)1323-1324
頁數2
期刊Electronics Letters
32
發行號14
DOIs
出版狀態已出版 - 4 7月 1996

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