Experimental determination of the transport parameters in high performance Dopant-Segregated Schottky-barrier MOSFETs

X. S. Cheng; E. R. Hsieh; Steve S. Chung; C. H. Tsai; T. L. Tsai; W. T. Chiang; C. T. Tsai; C. W. Liang

doi:10.1109/VTSA.2011.5872257

Experimental determination of the transport parameters in high performance Dopant-Segregated Schottky-barrier MOSFETs

X. S. Cheng, E. R. Hsieh, Steve S. Chung, C. H. Tsai, T. L. Tsai, W. T. Chiang, C. T. Tsai, C. W. Liang

電機工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

摘要

A new approach has been developed to investigate the carrier transport characteristics of Dopant-Segregated Schottky (DSS) barrier MOSFET. A Velocity Saturation Model (VSM) based on experimentally measurements has been developed to determine the injection velocity (v_inj) and ballistic efficiency (B_sat). DSS device with low series source/drain resistance and high B_sat of 0.47 leads to 15.2% of I_d enhancement over the conventional MOSFET. The VSM demonstrates more accurate B_sat and v_inj results than the conventional Temperature Dependent Method(TDM) ones.

原文	???core.languages.en_GB???
主出版物標題	Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
頁面	120-121
頁數	2
DOIs	https://doi.org/10.1109/VTSA.2011.5872257
出版狀態	已出版 - 2011
事件	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan 持續時間: 25 4月 2011 → 27 4月 2011

出版系列

名字	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

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???event.eventtypes.event.conference???	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
國家/地區	Taiwan
城市	Hsinchu
期間	25/04/11 → 27/04/11

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10.1109/VTSA.2011.5872257

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Cheng, X. S., Hsieh, E. R., Chung, S. S., Tsai, C. H., Tsai, T. L., Chiang, W. T., Tsai, C. T., & Liang, C. W. (2011). Experimental determination of the transport parameters in high performance Dopant-Segregated Schottky-barrier MOSFETs. 於 Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (頁 120-121). 文章 5872257 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872257

Cheng, X. S. ; Hsieh, E. R. ; Chung, Steve S. 等. / Experimental determination of the transport parameters in high performance Dopant-Segregated Schottky-barrier MOSFETs. Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. 頁 120-121 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{e5f814ffb5004d778dcdda8149e7ac8e,

title = "Experimental determination of the transport parameters in high performance Dopant-Segregated Schottky-barrier MOSFETs",

abstract = "A new approach has been developed to investigate the carrier transport characteristics of Dopant-Segregated Schottky (DSS) barrier MOSFET. A Velocity Saturation Model (VSM) based on experimentally measurements has been developed to determine the injection velocity (vinj) and ballistic efficiency (Bsat). DSS device with low series source/drain resistance and high Bsat of 0.47 leads to 15.2% of Id enhancement over the conventional MOSFET. The VSM demonstrates more accurate Bsat and vinj results than the conventional Temperature Dependent Method(TDM) ones.",

author = "Cheng, {X. S.} and Hsieh, {E. R.} and Chung, {Steve S.} and Tsai, {C. H.} and Tsai, {T. L.} and Chiang, {W. T.} and Tsai, {C. T.} and Liang, {C. W.}",

year = "2011",

doi = "10.1109/VTSA.2011.5872257",

language = "???core.languages.en_GB???",

isbn = "9781424484928",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "120--121",

booktitle = "Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011",

note = "2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 ; Conference date: 25-04-2011 Through 27-04-2011",

}

Cheng, XS, Hsieh, ER, Chung, SS, Tsai, CH, Tsai, TL, Chiang, WT, Tsai, CT & Liang, CW 2011, Experimental determination of the transport parameters in high performance Dopant-Segregated Schottky-barrier MOSFETs. 於 Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011., 5872257, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 頁 120-121, 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011, Hsinchu, Taiwan, 25/04/11. https://doi.org/10.1109/VTSA.2011.5872257

Experimental determination of the transport parameters in high performance Dopant-Segregated Schottky-barrier MOSFETs. / Cheng, X. S.; Hsieh, E. R.; Chung, Steve S. 等.
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 120-121 5872257 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

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T1 - Experimental determination of the transport parameters in high performance Dopant-Segregated Schottky-barrier MOSFETs

AU - Cheng, X. S.

AU - Hsieh, E. R.

AU - Chung, Steve S.

AU - Tsai, C. H.

AU - Tsai, T. L.

AU - Chiang, W. T.

AU - Tsai, C. T.

AU - Liang, C. W.

PY - 2011

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N2 - A new approach has been developed to investigate the carrier transport characteristics of Dopant-Segregated Schottky (DSS) barrier MOSFET. A Velocity Saturation Model (VSM) based on experimentally measurements has been developed to determine the injection velocity (vinj) and ballistic efficiency (Bsat). DSS device with low series source/drain resistance and high Bsat of 0.47 leads to 15.2% of Id enhancement over the conventional MOSFET. The VSM demonstrates more accurate Bsat and vinj results than the conventional Temperature Dependent Method(TDM) ones.

AB - A new approach has been developed to investigate the carrier transport characteristics of Dopant-Segregated Schottky (DSS) barrier MOSFET. A Velocity Saturation Model (VSM) based on experimentally measurements has been developed to determine the injection velocity (vinj) and ballistic efficiency (Bsat). DSS device with low series source/drain resistance and high Bsat of 0.47 leads to 15.2% of Id enhancement over the conventional MOSFET. The VSM demonstrates more accurate Bsat and vinj results than the conventional Temperature Dependent Method(TDM) ones.

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T2 - 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011

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Cheng XS, Hsieh ER, Chung SS, Tsai CH, Tsai TL, Chiang WT 等. Experimental determination of the transport parameters in high performance Dopant-Segregated Schottky-barrier MOSFETs. 於 Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 120-121. 5872257. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2011.5872257

Experimental determination of the transport parameters in high performance Dopant-Segregated Schottky-barrier MOSFETs

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