Excitation Density and Temperature Dependent Photoluminescence of InGaAs Self-Assembled Quantum Dots

Wen Hao Chang, Tzu Min Hsu, Kuei Fen Tsai, Tzer En Nee, Jen Inn Chyi, Nien Tze Yeh

研究成果: 雜誌貢獻會議論文同行評審

10 引文 斯高帕斯(Scopus)

摘要

In this paper, we shall report on the excitation density and temperature dependent photoluminescence produced by discrete energy levels from InGaAs self-assembled quantum dots. While increasing the photoexcitation density, five peaks originating from discrete energy levels of quantum dot and welting layer are observed. By deconvoluting these spectra using multiple Gaussian fit, the intensity of each state is saturated following its degeneracy. We describe the lateral confinement of quantum dots using a parabolic potential model. The saturated values are in good agreement with the degeneracy of this potential type. From the temperature dependent photoluminescence, we observed the thermally activated quenching of each state. Our results suggest that the wetting layer acts as a barrier to the carrier thermallization processes offering a two dimensional path for inter-dot coupling.

原文???core.languages.en_GB???
頁(從 - 到)554-557
頁數4
期刊Japanese Journal of Applied Physics
38
發行號1 B
DOIs
出版狀態已出版 - 1999
事件Proceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan
持續時間: 31 5月 19984 6月 1998

指紋

深入研究「Excitation Density and Temperature Dependent Photoluminescence of InGaAs Self-Assembled Quantum Dots」主題。共同形成了獨特的指紋。

引用此