Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

K. Y. Lai; T. Paskova; V. D. Wheeler; J. A. Grenko; M. A.L. Johnson; D. W. Barlage; K. Udwary; E. A. Preble; K. R. Evans

doi:10.1063/1.3264729

Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

K. Y. Lai, T. Paskova, V. D. Wheeler, J. A. Grenko, M. A.L. Johnson, D. W. Barlage, K. Udwary, E. A. Preble, K. R. Evans

光電科學與工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

12 引文斯高帕斯（Scopus）

摘要

InGaN/GaN quantum wells (QWs) grown with identical conditions on m-plane and c-plane GaN substrates were studied by cathodoluminescence spectroscopy. At a low current of 10 nA, the emission intensity and wavelength of the m-plane aligned QWs were found to be about two times stronger and 19.5 nm blueshifted with respect to that of the c-plane aligned QWs. An increase in the current over three orders of magnitude was found to result in an increase in the emission intensities, with faster saturation in the m-plane aligned QWs. This was explained by the screening of quantum-confined Stark effect in the emission efficiency of the c-plane aligned QWs.

原文	???core.languages.en_GB???
文章編號	113104
期刊	Journal of Applied Physics
卷	106
發行號	11
DOIs	https://doi.org/10.1063/1.3264729
出版狀態	已出版 - 2009

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10.1063/1.3264729

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abstract = "InGaN/GaN quantum wells (QWs) grown with identical conditions on m-plane and c-plane GaN substrates were studied by cathodoluminescence spectroscopy. At a low current of 10 nA, the emission intensity and wavelength of the m-plane aligned QWs were found to be about two times stronger and 19.5 nm blueshifted with respect to that of the c-plane aligned QWs. An increase in the current over three orders of magnitude was found to result in an increase in the emission intensities, with faster saturation in the m-plane aligned QWs. This was explained by the screening of quantum-confined Stark effect in the emission efficiency of the c-plane aligned QWs.",

author = "Lai, {K. Y.} and T. Paskova and Wheeler, {V. D.} and Grenko, {J. A.} and Johnson, {M. A.L.} and Barlage, {D. W.} and K. Udwary and Preble, {E. A.} and Evans, {K. R.}",

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AU - Lai, K. Y.

AU - Paskova, T.

AU - Wheeler, V. D.

AU - Grenko, J. A.

AU - Johnson, M. A.L.

AU - Barlage, D. W.

AU - Udwary, K.

AU - Preble, E. A.

AU - Evans, K. R.

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N2 - InGaN/GaN quantum wells (QWs) grown with identical conditions on m-plane and c-plane GaN substrates were studied by cathodoluminescence spectroscopy. At a low current of 10 nA, the emission intensity and wavelength of the m-plane aligned QWs were found to be about two times stronger and 19.5 nm blueshifted with respect to that of the c-plane aligned QWs. An increase in the current over three orders of magnitude was found to result in an increase in the emission intensities, with faster saturation in the m-plane aligned QWs. This was explained by the screening of quantum-confined Stark effect in the emission efficiency of the c-plane aligned QWs.

AB - InGaN/GaN quantum wells (QWs) grown with identical conditions on m-plane and c-plane GaN substrates were studied by cathodoluminescence spectroscopy. At a low current of 10 nA, the emission intensity and wavelength of the m-plane aligned QWs were found to be about two times stronger and 19.5 nm blueshifted with respect to that of the c-plane aligned QWs. An increase in the current over three orders of magnitude was found to result in an increase in the emission intensities, with faster saturation in the m-plane aligned QWs. This was explained by the screening of quantum-confined Stark effect in the emission efficiency of the c-plane aligned QWs.

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Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

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