@inproceedings{ad39c8e21aa44b8dac739a58a9fb4bda,
title = "Excess noise of 850-nm silicon avalanche photodiodes fabricated using CMOS process",
abstract = "This study analyzes the effect of biases in the deep n-well on excess noise in 850-nm Si avalanche photodiodes (APDs). Si APDs were fabricated in standard 0.18-μm CMOS technology. The extra bias in the deep n-well can effectively eliminate the slow photo-generated carriers from the substrate and improve bandwidth and excess noise.",
keywords = "CMOS process, excess noise, Si avalanche photodiodes",
author = "Chou, {Fang Ping} and Hsieh, {Yu Chen} and Huang, {Chih Ai} and Hsin, {Yue Ming}",
year = "2014",
doi = "10.1109/ISNE.2014.6839342",
language = "???core.languages.en_GB???",
isbn = "9781479947805",
series = "2014 International Symposium on Next-Generation Electronics, ISNE 2014",
publisher = "IEEE Computer Society",
booktitle = "2014 International Symposium on Next-Generation Electronics, ISNE 2014",
note = "3rd International Symposium on Next-Generation Electronics, ISNE 2014 ; Conference date: 07-05-2014 Through 10-05-2014",
}