Evolution of composition distribution of Si-capped Ge islands on Si(001)

S. W. Lee, C. H. Lee, H. T. Chang, S. L. Cheng, C. W. Liu

研究成果: 雜誌貢獻期刊論文同行評審

10 引文 斯高帕斯(Scopus)


The evolution of the composition distribution and microstructures of Ge islands on Si(001) during the Si overgrowth was investigated by atomic force microscopy combined with selective wet etching procedures. With increasing Si coverage to 5.4 nm, the uncapped Ge islands were found to change their shapes dramatically from domes to truncated pyramids, nanorings and eventually to the fully buried islands. Different atomic composition profiles in SiGe islands were observed at different Si coverages. Especially, the nanorings were found to have a Ge-rich core with a Si-rich periphery. Based on the experimental results, the Ge redistribution in islands during Si capping is not only correlated with the intermixing between Si capping layer and Ge islands, but also a strain-driven process.

頁(從 - 到)5029-5032
期刊Thin Solid Films
出版狀態已出版 - 1 7月 2009


深入研究「Evolution of composition distribution of Si-capped Ge islands on Si(001)」主題。共同形成了獨特的指紋。