跳至主導覽
跳至搜尋
跳過主要內容
國立中央大學 首頁
說明與常見問題
English
中文
首頁
人才檔案
研究單位
研究計畫
研究成果
資料集
榮譽/獲獎
學術活動
新聞/媒體
影響
按專業知識、姓名或所屬機構搜尋
Evidence of charged interface states limited scattering in GaN heterostructures
Indraneel Sanyal, Yu Chih Chen, Chuan Yue Yu,
Jen Inn Chyi
前瞻科技研究中心
電機工程學系
光電科學研究中心
研究成果
:
雜誌貢獻
›
期刊論文
›
同行評審
1
引文 斯高帕斯（Scopus）
總覽
指紋
研究計畫
(1)
指紋
深入研究「Evidence of charged interface states limited scattering in GaN heterostructures」主題。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
GaN Heterostructure
100%
Charged Interface
100%
Interface States
100%
Temperature Effect
66%
Hall Measurement
33%
Scattering Mechanism
33%
High Performance
16%
AlGaN-GaN
16%
High Electron Mobility Transistor
16%
Dislocation Density
16%
Electron Density
16%
Electron Mobility
16%
Centroid
16%
Electron Scattering
16%
Growth Conditions
16%
2-dimensional Electron Gas (2DEG)
16%
State of Charge
16%
Aluminum Gallium Nitride (AlGaN)
16%
Hall Mobility
16%
Subthreshold Slope
16%
Heterointerface
16%
Scattering Density
16%
III-nitride Devices
16%
III-nitride Heterostructures
16%
Phonon-phonon Scattering
16%
Interface Roughness Scattering
16%
Matthiessen's Rule
16%
Physics
Phonon
100%
Nitride
100%
High Electron Mobility Transistors
50%
Electron Density
50%
Electron Scattering
50%
Electron Mobility
50%
Heterojunctions
50%
Electron Gas
50%
Material Science
Heterojunction
100%
Electron Mobility
50%
Nitride Compound
50%
Density
25%
Aluminum Nitride
25%
Transistor
25%
Carrier Concentration
25%
Hall Mobility
25%
Chemistry
Interface State
100%
Electron Mobility
33%
Nitride
33%
Phonon
33%
Electron Density
16%
Two-Dimensional Electron Gas
16%
Interface Roughness
16%
Electron Scattering
16%