@article{c8b0895d77f745d1a7c852f029f6c8a1,
title = "Evaluation of diffusion barrier between pure Sn and Te",
abstract = "An electroless Ni layer is often chosen as an effective diffusion barrier in thermoelectric modules. Thermal aging can form a thick layer of NiTe. This study investigates the growth kinetics of NiTe intermetallic compounds (IMCs). The apparent activation energy was determined to be 70.9 kJ/mol. Ni/Co was also selected as an alternative barrier because Co-Te did not form IMCs. Results show that Co can effectively suppress the voids formed at the interfaces. After high-temperature annealing, a very thin Ni-Te IMC formed between Co-P and Te.",
keywords = "Diffusion barrier, Electroless cobalt, Electroless nickel, Pb-free solder, Tellurium, Thermoelectric material",
author = "Ko, {Chang Yen} and Wu, {Albert T.}",
note = "Funding Information: The authors would like to acknowledge the assistance of Prof. C.N. Liao{\textquoteright}s group in National Tsing Hua University in fabricating Te samples. This work is supported by the National Science Council (NSC) of Taiwan under Contract No. NSC-98-2221-E-008-028-MY3. The help of S.Y. Tsai from National Tsing Hua University with operating the EPMA is greatly appreciated.",
year = "2012",
month = dec,
doi = "10.1007/s11664-012-2269-1",
language = "???core.languages.en_GB???",
volume = "41",
pages = "3320--3324",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
number = "12",
}