Erratum: The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors (Applied Physics Letters(2014) 104 (033503))

W. C. Liao, Y. L. Chen, C. H. Chen, J. I. Chyi, Y. M. Hsin

研究成果: 雜誌貢獻評論/辯論

2 引文 斯高帕斯(Scopus)
原文???core.languages.en_GB???
文章編號069902
期刊Applied Physics Letters
104
發行號6
DOIs
出版狀態已出版 - 2 10月 2014

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