Erratum: "Impact-ionization-induced bandwidth-enhancement of a Si-SiGe-based avalanche photodiode operating at a wavelength of 830 nm with a gain-band width product of 428 GHz" (IEEE Photonics Technology Letters)

J. W. Shi, Y. S. Wu, Z. R. Li, P. S. Chen

研究成果: 雜誌貢獻評論/辯論

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頁(從 - 到)1694
頁數1
期刊IEEE Photonics Technology Letters
19
發行號20
DOIs
出版狀態已出版 - 10月 2007

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