Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties

C. T. Huang; C. L. Hsin; K. W. Huang; C. Y. Lee; P. H. Yeh; U. S. Chen; L. J. Chen

doi:10.1063/1.2777181

Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties

C. T. Huang, C. L. Hsin, K. W. Huang, C. Y. Lee, P. H. Yeh, U. S. Chen, L. J. Chen

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

46 引文斯高帕斯（Scopus）

摘要

Erbium-doped silicon nanowires have been grown via a vapor transport and condensation method with Er Cl3 6 H2 O powder as part of the source in one step. The Er-doped silicon nanowires exhibit the room temperature photoluminescence at a wavelength of 1.54 μm, ideal for optical communication. From I-V measurements, the resistivity of 4.2 at. % Er-doped Si nanowires was determined to be 1.5× 10-2 cm. The Er-doped silicon nanowires were found to possess excellent field emission properties with a field enhancement factor as high as 1260. The rich variety of enhanced physical properties exhibited by the Er-doped silicon nanowires points to versatile applications for advanced devices.

原文	???core.languages.en_GB???
文章編號	093133
期刊	Applied Physics Letters
卷	91
發行號	9
DOIs	https://doi.org/10.1063/1.2777181
出版狀態	已出版 - 2007

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10.1063/1.2777181

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title = "Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties",

abstract = "Erbium-doped silicon nanowires have been grown via a vapor transport and condensation method with Er Cl3 6 H2 O powder as part of the source in one step. The Er-doped silicon nanowires exhibit the room temperature photoluminescence at a wavelength of 1.54 μm, ideal for optical communication. From I-V measurements, the resistivity of 4.2 at. % Er-doped Si nanowires was determined to be 1.5× 10-2 cm. The Er-doped silicon nanowires were found to possess excellent field emission properties with a field enhancement factor as high as 1260. The rich variety of enhanced physical properties exhibited by the Er-doped silicon nanowires points to versatile applications for advanced devices.",

author = "Huang, {C. T.} and Hsin, {C. L.} and Huang, {K. W.} and Lee, {C. Y.} and Yeh, {P. H.} and Chen, {U. S.} and Chen, {L. J.}",

note = "Funding Information: The research was supported by the ROC National Science Council through Grant Nos. NSC 95-2221-E-007-238 and NSC 95-2120-M-007-012.",

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T1 - Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties

AU - Huang, C. T.

AU - Hsin, C. L.

AU - Huang, K. W.

AU - Lee, C. Y.

AU - Yeh, P. H.

AU - Chen, U. S.

AU - Chen, L. J.

N1 - Funding Information: The research was supported by the ROC National Science Council through Grant Nos. NSC 95-2221-E-007-238 and NSC 95-2120-M-007-012.

PY - 2007

Y1 - 2007

N2 - Erbium-doped silicon nanowires have been grown via a vapor transport and condensation method with Er Cl3 6 H2 O powder as part of the source in one step. The Er-doped silicon nanowires exhibit the room temperature photoluminescence at a wavelength of 1.54 μm, ideal for optical communication. From I-V measurements, the resistivity of 4.2 at. % Er-doped Si nanowires was determined to be 1.5× 10-2 cm. The Er-doped silicon nanowires were found to possess excellent field emission properties with a field enhancement factor as high as 1260. The rich variety of enhanced physical properties exhibited by the Er-doped silicon nanowires points to versatile applications for advanced devices.

AB - Erbium-doped silicon nanowires have been grown via a vapor transport and condensation method with Er Cl3 6 H2 O powder as part of the source in one step. The Er-doped silicon nanowires exhibit the room temperature photoluminescence at a wavelength of 1.54 μm, ideal for optical communication. From I-V measurements, the resistivity of 4.2 at. % Er-doped Si nanowires was determined to be 1.5× 10-2 cm. The Er-doped silicon nanowires were found to possess excellent field emission properties with a field enhancement factor as high as 1260. The rich variety of enhanced physical properties exhibited by the Er-doped silicon nanowires points to versatile applications for advanced devices.

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DO - 10.1063/1.2777181

M3 - 期刊論文

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Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties

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