Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties

C. T. Huang, C. L. Hsin, K. W. Huang, C. Y. Lee, P. H. Yeh, U. S. Chen, L. J. Chen

研究成果: 雜誌貢獻期刊論文同行評審

45 引文 斯高帕斯(Scopus)

摘要

Erbium-doped silicon nanowires have been grown via a vapor transport and condensation method with Er Cl3 6 H2 O powder as part of the source in one step. The Er-doped silicon nanowires exhibit the room temperature photoluminescence at a wavelength of 1.54 μm, ideal for optical communication. From I-V measurements, the resistivity of 4.2 at. % Er-doped Si nanowires was determined to be 1.5× 10-2 cm. The Er-doped silicon nanowires were found to possess excellent field emission properties with a field enhancement factor as high as 1260. The rich variety of enhanced physical properties exhibited by the Er-doped silicon nanowires points to versatile applications for advanced devices.

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文章編號093133
期刊Applied Physics Letters
91
發行號9
DOIs
出版狀態已出版 - 2007

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