@article{0d2053ad7fa24352b5a0bddf4707bd08,
title = "Er diffusion into gallium nitride",
abstract = "In this study, we report the diffusion mechanism of Er in GaN and the optical properties of Er-diffused GaN. The diffusion coefficient has been measured by Rutherford backscattering spectroscopy and secondary ion mass spectrometry. Erbium is also implanted into GaN to compare the photoluminescence (PL) characteristics. The PL emission of Er-diffused and implanted GaN can be observed in infrared region. The emission intensity efficiency related to the Er concentration distribution after the Er diffusion is discussed.",
keywords = "Diffusion, Erbium, GaN, Ion implantation, Rare earth",
author = "Chen, {Chii Chang} and Ting, {Yi Sheng} and Lee, {Chien Chieh} and Chi, {Gou Chung} and Purushottam Chakraborty and Tapas Chini and Chuang, {Hui Wen} and Tsang, {Jian Shihn} and Kuo, {Cheng Ta} and Tsai, {Wen Chung} and Chen, {Shu Han} and Chyi, {Jen Inn}",
note = "Funding Information: The work was supported by Grant from the National Science Council, Taiwan and MOE Program for Promoting Academic Excellence of Universities under the grant number 91-E-FA06-1-4.",
year = "2003",
month = mar,
doi = "10.1016/S0038-1101(02)00407-0",
language = "???core.languages.en_GB???",
volume = "47",
pages = "529--531",
journal = "Solid-State Electronics",
issn = "0038-1101",
number = "3",
}