Epitaxial nickel disilicide with low resistivity and excellent reliability

Cheng Lun Hsin, Shiu Sheng Deng

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

Ultra-thin epitaxial NiSi2 was formed, and its structure was examined by electron microscopy and x-ray diffraction. Compared with previous reports, the measured resistivity of the epitaxial NiSi2 was unprecedentedly low, reaching 7 μΩ cm in the experimental results and up to 14.93 μΩ cm after modification. The reliability, which was investigated under different temperatures and current densities to understand its electronic characteristics, was 1.5 times better than that of the conventional polycrystalline counterpart. Black's equation and the measured mean-time-to-failure (MTTF) were used to obtain the reliability characteristics of epitaxial and poly-NiSi2. Confidence intervals at 95% for each MTTF confirmed the single failure mode. The electromigration phenomenon was observed to be the failure mechanism. Our results provide evidence that epitaxial NiSi2 is a promising contact material for future electronics.

原文???core.languages.en_GB???
文章編號065704
期刊Nanotechnology
27
發行號6
DOIs
出版狀態已出版 - 12 1月 2016

指紋

深入研究「Epitaxial nickel disilicide with low resistivity and excellent reliability」主題。共同形成了獨特的指紋。

引用此