Epitaxial AlN thin film surface acoustic wave devices prepared on GaN/sapphire using low-temperature helicon sputtering system

H. L. Kao, W. C. Chen, Wei Cheng Chien, Hui Feng Lin, Tzu Chien Chen, Chung Yi Lin, Y. T. Lin, J. I. Chyi, C. H. Hsu

研究成果: 雜誌貢獻期刊論文同行評審

14 引文 斯高帕斯(Scopus)

摘要

High-quality epitaxial AlN films have been deposited on GaN/sapphire using helicon sputtering at a temperature of 300°C. The surface acoustic wave (SAW) characteristics, in terms of insertion loss, stopband rejection, and electromechanical coupling coefficient, of SAW devices fabricated on AIN/GaN/sapphire are much superior than those fabricated on GaN/ sapphire. The investigation of environmental effects, including temperature and relative humidity, shows that the ambient stability can be improved with the deposition of an AlN film on GaN/sapphire. An oscillator fabricated using an AlN/GaN/ sapphire-based SAW device was developed for application in sensors. The composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and utilize their semiconducting, optoelectronic, and piezoelectric properties.

原文???core.languages.en_GB???
頁(從 - 到)124-129
頁數6
期刊Japanese Journal of Applied Physics
47
發行號1
DOIs
出版狀態已出版 - 18 1月 2008

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