M-plane non-polar bulk GaN substrates were regrown by hydride vapour phase epitaxy (HVPE), aiming to enlarge their lateral size. The non-polar GaN substrates were synthesized by growing thick GaN boules by HVPE along the c-axis, and wafering transversely to expose non-polar (m- or a-plane) surfaces. Non-polar GaN substrates obtained in this manner contains lower defect density comparing to those produced by heteroepitaxial growth. After the regrowth, substantial lateral expansion in ,  and  was observed. Threading dislocation densities were estimated by cathodoluminescence measured at the cross-section areas. The dislocation densities in the substrate and the regrown areas were approximately 5×106 cm-2 and 1×106 cm-2, respectively, indicating a comparable structural quality achieved by the regrowth. Non-polar GaN substrates prepared by this process provide a promising method to fabricate devices for next generation.
|頁（從 - 到）||1886-1888|
|期刊||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版狀態||已出版 - 2008|
|事件||7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States|
持續時間: 16 9月 2007 → 21 9月 2007