Enlargement of bulk non-polar GaN substrates by HVPE regrowth

K. Y. Lai, V. D. Wheeler, J. A. Grenko, M. A.L. Johnson, A. D. Hanser, E. A. Preble, L. Liu, T. Paskova, K. R. Evans

研究成果: 雜誌貢獻會議論文同行評審

1 引文 斯高帕斯(Scopus)


M-plane non-polar bulk GaN substrates were regrown by hydride vapour phase epitaxy (HVPE), aiming to enlarge their lateral size. The non-polar GaN substrates were synthesized by growing thick GaN boules by HVPE along the c-axis, and wafering transversely to expose non-polar (m- or a-plane) surfaces. Non-polar GaN substrates obtained in this manner contains lower defect density comparing to those produced by heteroepitaxial growth. After the regrowth, substantial lateral expansion in [0001], [1120] and [1120] was observed. Threading dislocation densities were estimated by cathodoluminescence measured at the cross-section areas. The dislocation densities in the substrate and the regrown areas were approximately 5×106 cm-2 and 1×106 cm-2, respectively, indicating a comparable structural quality achieved by the regrowth. Non-polar GaN substrates prepared by this process provide a promising method to fabricate devices for next generation.

頁(從 - 到)1886-1888
期刊Physica Status Solidi (C) Current Topics in Solid State Physics
出版狀態已出版 - 2008
事件7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
持續時間: 16 9月 200721 9月 2007


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