摘要
The optical properties of InAs quantum dots (QDs) with a GaAs, an InAlAs, or an InAlAsSb overgrown layer are studied. For the InAs QDs with an InAlAsSb overgrown layer, their room temperature photoluminescence intensity is enhanced by as much as 4.5-fold compared to that of the QDs with an InAlAs one while maintaining similar narrow linewidth (26 meV) and large ground-to first excited-state separation (103 meV). The increase in radiative efficiency of the InAsInAlAsSb heterostructure is attributed to its better material quality due to the surfactant nature of Sb adatoms.
原文 | ???core.languages.en_GB??? |
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文章編號 | 153106 |
期刊 | Applied Physics Letters |
卷 | 91 |
發行號 | 15 |
DOIs | |
出版狀態 | 已出版 - 2007 |