Enhancing the optical properties of InAs quantum dots by an InAlAsSb overgrown layer

Pei Chin Chiu, Wei Sheng Liu, Meng Jie Shiau, Jen Inn Chyi, Wen Yen Chen, Hsing Szu Chang, Tzu Min Hsu

研究成果: 雜誌貢獻期刊論文同行評審

15 引文 斯高帕斯(Scopus)

摘要

The optical properties of InAs quantum dots (QDs) with a GaAs, an InAlAs, or an InAlAsSb overgrown layer are studied. For the InAs QDs with an InAlAsSb overgrown layer, their room temperature photoluminescence intensity is enhanced by as much as 4.5-fold compared to that of the QDs with an InAlAs one while maintaining similar narrow linewidth (26 meV) and large ground-to first excited-state separation (103 meV). The increase in radiative efficiency of the InAsInAlAsSb heterostructure is attributed to its better material quality due to the surfactant nature of Sb adatoms.

原文???core.languages.en_GB???
文章編號153106
期刊Applied Physics Letters
91
發行號15
DOIs
出版狀態已出版 - 2007

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