Enhanced Thermoelectric Properties of P-Type Sn-Substituted Higher Manganese Silicides

Ming Xun Jiang; Sang Ren Yang; I. Yu Tsao; Bayu Satriya Wardhana; Shih Feng Hsueh; Jason Shian Ching Jang; Cheng Lun Hsin; Sheng Wei Lee

doi:10.3390/nano14060494

Enhanced Thermoelectric Properties of P-Type Sn-Substituted Higher Manganese Silicides

Ming Xun Jiang, Sang Ren Yang, I. Yu Tsao, Bayu Satriya Wardhana, Shih Feng Hsueh, Jason Shian Ching Jang, Cheng Lun Hsin, Sheng Wei Lee

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This study introduces Sn-substituted higher manganese silicides (MnSi_1.75, HMS) synthesized via an arc-melting process followed by spark plasma sintering (SPS). The influences of Sn concentrations on the thermoelectric performance of Mn(Si_1−xSn_x)_1.75 (x = 0, 0.001, 0.005, 0.01, 0.015) are systematically investigated. Our findings reveal that metallic Sn precipitates within the Mn(Si_1−xSn_x)_1.75 matrix at x ≥ 0.005, with a determined solubility limit of approximately x = 0.001. In addition, substituting Si with Sn effectively reduces the lattice thermal conductivity of HMS by introducing point defect scattering. In contrast to the undoped HMS, the lattice thermal conductivity decreases to a minimum value of 2.0 W/mK at 750 K for the Mn(Si_0.999Sn_0.001)_1.75 sample, marking a substantial 47.4% reduction. Consequently, a figure of merit (ZT) value of ~0.31 is attained at 750 K. This considerable enhancement in ZT is primarily attributed to the suppressed lattice thermal conductivity resulting from Sn substitution.

原文	???core.languages.en_GB???
文章編號	494
期刊	Nanomaterials
卷	14
發行號	6
DOIs	https://doi.org/10.3390/nano14060494
出版狀態	已出版 - 3月 2024

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10.3390/nano14060494

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title = "Enhanced Thermoelectric Properties of P-Type Sn-Substituted Higher Manganese Silicides",

abstract = "This study introduces Sn-substituted higher manganese silicides (MnSi1.75, HMS) synthesized via an arc-melting process followed by spark plasma sintering (SPS). The influences of Sn concentrations on the thermoelectric performance of Mn(Si1−xSnx)1.75 (x = 0, 0.001, 0.005, 0.01, 0.015) are systematically investigated. Our findings reveal that metallic Sn precipitates within the Mn(Si1−xSnx)1.75 matrix at x ≥ 0.005, with a determined solubility limit of approximately x = 0.001. In addition, substituting Si with Sn effectively reduces the lattice thermal conductivity of HMS by introducing point defect scattering. In contrast to the undoped HMS, the lattice thermal conductivity decreases to a minimum value of 2.0 W/mK at 750 K for the Mn(Si0.999Sn0.001)1.75 sample, marking a substantial 47.4% reduction. Consequently, a figure of merit (ZT) value of ~0.31 is attained at 750 K. This considerable enhancement in ZT is primarily attributed to the suppressed lattice thermal conductivity resulting from Sn substitution.",

keywords = "figure of merit, higher manganese silicide, spark plasma sintering, thermal conductivity, thermoelectric",

author = "Jiang, {Ming Xun} and Yang, {Sang Ren} and Tsao, {I. Yu} and Wardhana, {Bayu Satriya} and Hsueh, {Shih Feng} and Jang, {Jason Shian Ching} and Hsin, {Cheng Lun} and Lee, {Sheng Wei}",

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T1 - Enhanced Thermoelectric Properties of P-Type Sn-Substituted Higher Manganese Silicides

AU - Jiang, Ming Xun

AU - Yang, Sang Ren

AU - Tsao, I. Yu

AU - Wardhana, Bayu Satriya

AU - Hsueh, Shih Feng

AU - Jang, Jason Shian Ching

AU - Hsin, Cheng Lun

AU - Lee, Sheng Wei

PY - 2024/3

Y1 - 2024/3

N2 - This study introduces Sn-substituted higher manganese silicides (MnSi1.75, HMS) synthesized via an arc-melting process followed by spark plasma sintering (SPS). The influences of Sn concentrations on the thermoelectric performance of Mn(Si1−xSnx)1.75 (x = 0, 0.001, 0.005, 0.01, 0.015) are systematically investigated. Our findings reveal that metallic Sn precipitates within the Mn(Si1−xSnx)1.75 matrix at x ≥ 0.005, with a determined solubility limit of approximately x = 0.001. In addition, substituting Si with Sn effectively reduces the lattice thermal conductivity of HMS by introducing point defect scattering. In contrast to the undoped HMS, the lattice thermal conductivity decreases to a minimum value of 2.0 W/mK at 750 K for the Mn(Si0.999Sn0.001)1.75 sample, marking a substantial 47.4% reduction. Consequently, a figure of merit (ZT) value of ~0.31 is attained at 750 K. This considerable enhancement in ZT is primarily attributed to the suppressed lattice thermal conductivity resulting from Sn substitution.

AB - This study introduces Sn-substituted higher manganese silicides (MnSi1.75, HMS) synthesized via an arc-melting process followed by spark plasma sintering (SPS). The influences of Sn concentrations on the thermoelectric performance of Mn(Si1−xSnx)1.75 (x = 0, 0.001, 0.005, 0.01, 0.015) are systematically investigated. Our findings reveal that metallic Sn precipitates within the Mn(Si1−xSnx)1.75 matrix at x ≥ 0.005, with a determined solubility limit of approximately x = 0.001. In addition, substituting Si with Sn effectively reduces the lattice thermal conductivity of HMS by introducing point defect scattering. In contrast to the undoped HMS, the lattice thermal conductivity decreases to a minimum value of 2.0 W/mK at 750 K for the Mn(Si0.999Sn0.001)1.75 sample, marking a substantial 47.4% reduction. Consequently, a figure of merit (ZT) value of ~0.31 is attained at 750 K. This considerable enhancement in ZT is primarily attributed to the suppressed lattice thermal conductivity resulting from Sn substitution.

KW - figure of merit

KW - higher manganese silicide

KW - spark plasma sintering

KW - thermal conductivity

KW - thermoelectric

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DO - 10.3390/nano14060494

M3 - 期刊論文

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JO - Nanomaterials

JF - Nanomaterials

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ER -

Enhanced Thermoelectric Properties of P-Type Sn-Substituted Higher Manganese Silicides

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