@inproceedings{3db1287c15a1462aa07144cb12fd9a04,
title = "Enhanced Performance of P-FeFETs with TiN:2.5nm/Mo/TiN Gate Stacks for 3-bit-per-cell Operation, 3.5V Read-after-Write, and High Endurance (109 Cycles) in Compute-in-Memory Applications",
abstract = "This study examines the performance of P-type FeFETs with various gate stacks, focusing on the TiN:2.5nm/Mo/TiN electrode. XPS and interface trap density (Dits) analyses confirm that ultra-thin barrier of TiN (b-TiN) suppresses Mo oxidation and carrier trapping in HZO, enhancing the memory window and reducing Vth variability. The sandwiched structure improves write speed, switching time, and low-voltage read-after-write operations. In neural network applications, b-TiN/Mo/TiN ensures more linear conductance and faster accuracy convergence, driving computational efficiency for CIM technologies. This work addresses the potential of b-TiN/Mo/TiN in enhancing FeFET reliability, endurance, and performance for neuromorphic and CIM applications.",
author = "Tsai, \{C. Y.\} and Hsiung, \{M. H.\} and Chen, \{Y. C.\} and Tsai, \{Y. T.\} and Tang, \{Y. T.\}",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025 ; Conference date: 09-03-2025 Through 12-03-2025",
year = "2025",
doi = "10.1109/EDTM61175.2025.11040468",
language = "???core.languages.en\_GB???",
series = "9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "9th IEEE Electron Devices Technology and Manufacturing Conference",
}