Enhanced growth of low-resistivity titanium silicides on epitaxial Si 0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer

W. W. Wu; C. W. Wang; K. N. Chen; S. L. Cheng; S. W. Lee

doi:10.1016/j.tsf.2010.04.090

Enhanced growth of low-resistivity titanium silicides on epitaxial Si _0.7Ge_0.3 on (001)Si with a sacrificial amorphous Si interlayer

W. W. Wu
, C. W. Wang
, K. N. Chen
, S. L. Cheng
, S. W. Lee

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si_0.7Ge_0.3 with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi₂ on Si_0.7Ge_0.3 grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.

原文	???core.languages.en_GB???
頁（從 - 到）	7279-7282
頁數	4
期刊	Thin Solid Films
卷	518
發行號	24
DOIs	https://doi.org/10.1016/j.tsf.2010.04.090
出版狀態	已出版 - 1 10月 2010

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10.1016/j.tsf.2010.04.090

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title = "Enhanced growth of low-resistivity titanium silicides on epitaxial Si 0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer",

abstract = "Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi2 on Si0.7Ge0.3 grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.",

keywords = "Epitaxial growth, Low-resistivity silicide, Nano thin film, Si-Ge alloys, TiSi",

author = "Wu, \{W. W.\} and Wang, \{C. W.\} and Chen, \{K. N.\} and Cheng, \{S. L.\} and Lee, \{S. W.\}",

note = "Funding Information: The research was supported by the Republic of China National Science Council through grant Nos. NSC 97-2218-E-009-027-MY3 and 97-2120-M-009-006 .",

year = "2010",

month = oct,

day = "1",

doi = "10.1016/j.tsf.2010.04.090",

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volume = "518",

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T1 - Enhanced growth of low-resistivity titanium silicides on epitaxial Si 0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer

AU - Wu, W. W.

AU - Wang, C. W.

AU - Chen, K. N.

AU - Cheng, S. L.

AU - Lee, S. W.

N1 - Funding Information: The research was supported by the Republic of China National Science Council through grant Nos. NSC 97-2218-E-009-027-MY3 and 97-2120-M-009-006 .

PY - 2010/10/1

Y1 - 2010/10/1

N2 - Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi2 on Si0.7Ge0.3 grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.

AB - Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi2 on Si0.7Ge0.3 grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.

KW - Epitaxial growth

KW - Low-resistivity silicide

KW - Nano thin film

KW - Si-Ge alloys

KW - TiSi

UR - https://www.scopus.com/pages/publications/77956882693

U2 - 10.1016/j.tsf.2010.04.090

DO - 10.1016/j.tsf.2010.04.090

M3 - 期刊論文

AN - SCOPUS:77956882693

SN - 0040-6090

VL - 518

SP - 7279

EP - 7282

JO - Thin Solid Films

JF - Thin Solid Films

IS - 24

ER -

Enhanced growth of low-resistivity titanium silicides on epitaxial Si 0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer

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Enhanced growth of low-resistivity titanium silicides on epitaxial Si _0.7Ge_0.3 on (001)Si with a sacrificial amorphous Si interlayer