@article{b15d068b682b457fbc614b565cab468b,
title = "Enhanced growth of low-resistivity titanium silicides on epitaxial Si 0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer",
abstract = "Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi2 on Si0.7Ge0.3 grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.",
keywords = "Epitaxial growth, Low-resistivity silicide, Nano thin film, Si-Ge alloys, TiSi",
author = "Wu, {W. W.} and Wang, {C. W.} and Chen, {K. N.} and Cheng, {S. L.} and Lee, {S. W.}",
note = "Funding Information: The research was supported by the Republic of China National Science Council through grant Nos. NSC 97-2218-E-009-027-MY3 and 97-2120-M-009-006 .",
year = "2010",
month = oct,
day = "1",
doi = "10.1016/j.tsf.2010.04.090",
language = "???core.languages.en_GB???",
volume = "518",
pages = "7279--7282",
journal = "Thin Solid Films",
issn = "0040-6090",
number = "24",
}