Enhanced growth of low-resistivity NiSi on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer

W. W. Wu; S. L. Cheng; S. W. Lee; L. J. Chen

Enhanced growth of low-resistivity NiSi on epitaxial Si_0.7Ge_0.3 on (001)Si with a sacrificial amorphous Si interlayer

W. W. Wu
, S. L. Cheng
, S. W. Lee
, L. J. Chen

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

18 引文斯高帕斯（Scopus）

摘要

Enhanced growth of low-resistivity NiSi on epitaxial Si_0.7Ge_0.3 with a sacrificial amorphous Si interlayer was achieved. The selection of the thickness ratio of Ni and a-Si was such that the a-Si was completely consumed in forming NiSi. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity NiSi on epitaxial Si_0.7Ge_0.3 grown by molecular beam epitaxy.

原文	???core.languages.en_GB???
頁（從 - 到）	2147-2150
頁數	4
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	21
發行號	5
出版狀態	已出版 - 9月 2003

引用此

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abstract = "Enhanced growth of low-resistivity NiSi on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si interlayer was achieved. The selection of the thickness ratio of Ni and a-Si was such that the a-Si was completely consumed in forming NiSi. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity NiSi on epitaxial Si0.7Ge0.3 grown by molecular beam epitaxy.",

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AU - Wu, W. W.

AU - Cheng, S. L.

AU - Lee, S. W.

AU - Chen, L. J.

PY - 2003/9

Y1 - 2003/9

N2 - Enhanced growth of low-resistivity NiSi on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si interlayer was achieved. The selection of the thickness ratio of Ni and a-Si was such that the a-Si was completely consumed in forming NiSi. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity NiSi on epitaxial Si0.7Ge0.3 grown by molecular beam epitaxy.

AB - Enhanced growth of low-resistivity NiSi on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si interlayer was achieved. The selection of the thickness ratio of Ni and a-Si was such that the a-Si was completely consumed in forming NiSi. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity NiSi on epitaxial Si0.7Ge0.3 grown by molecular beam epitaxy.

UR - https://www.scopus.com/pages/publications/0242593756

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SN - 1071-1023

VL - 21

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

ER -

Enhanced growth of low-resistivity NiSi on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer

摘要

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引用此

Enhanced growth of low-resistivity NiSi on epitaxial Si_0.7Ge_0.3 on (001)Si with a sacrificial amorphous Si interlayer