Enhanced growth of low-resistivity NiSi on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si interlayer was achieved. The selection of the thickness ratio of Ni and a-Si was such that the a-Si was completely consumed in forming NiSi. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity NiSi on epitaxial Si0.7Ge0.3 grown by molecular beam epitaxy.
|頁（從 - 到）||2147-2150|
|期刊||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版狀態||已出版 - 9月 2003|