Enhanced growth of CoSi2 on epitaxial Si0.7Ge 0.3 with a sacrificial amorphous Si interlayer

W. W. Wu; T. F. Chiang; S. L. Cheng; S. W. Lee; L. J. Chen; Y. H. Peng; H. H. Cheng

doi:10.1063/1.1494103

Enhanced growth of CoSi₂ on epitaxial Si_0.7Ge _0.3 with a sacrificial amorphous Si interlayer

W. W. Wu, T. F. Chiang, S. L. Cheng, S. W. Lee, L. J. Chen, Y. H. Peng, H. H. Cheng

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

13 引文斯高帕斯（Scopus）

摘要

Enhanced growth of CoSi₂ on epitaxial Si_0.7Ge _0.3 has been achieved with an interposing amorphous-Si (a-Si) layer. The a-Si layer was used as a sacrificial layer to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming CoSi₂ on Si_0.7Ge _0.3 grown by molecular beam eptiaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.

原文	???core.languages.en_GB???
頁（從 - 到）	820-822
頁數	3
期刊	Applied Physics Letters
卷	81
發行號	5
DOIs	https://doi.org/10.1063/1.1494103
出版狀態	已出版 - 29 7月 2002

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10.1063/1.1494103

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AU - Lee, S. W.

AU - Chen, L. J.

AU - Peng, Y. H.

AU - Cheng, H. H.

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AB - Enhanced growth of CoSi2 on epitaxial Si0.7Ge 0.3 has been achieved with an interposing amorphous-Si (a-Si) layer. The a-Si layer was used as a sacrificial layer to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming CoSi2 on Si0.7Ge 0.3 grown by molecular beam eptiaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.

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Enhanced growth of CoSi2 on epitaxial Si0.7Ge 0.3 with a sacrificial amorphous Si interlayer

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Enhanced growth of CoSi₂ on epitaxial Si_0.7Ge _0.3 with a sacrificial amorphous Si interlayer