摘要
In this study, we demonstrated significant enhancement of the formation of low-resistivity NiSi nanocontacts with controlled size on (0 0 1)Si 0.7 Ge 0.3 substrates by combining the nanosphere lithography with the use of a new Ni/a-Si bilayer nanodot structure. Low-resistivity NiSi with an average size of 78 nm was observed to be the only silicide phase formed in samples annealed at 350-800 °C. The presence of the interposing Si layer with appropriate thickness was found to effectively prevent Ge segregation and maintain the interface stability in forming NiSi nanocontacts on (0 0 1)Si 0.7 Ge 0.3 . As the annealing temperature was increased to 900 °C, amorphous SiO x nanowires were observed to grow from silicide nanocontact regions. The NSL technique in conjunction with a sacrificial Si interlayer process promises to be applicable in fabricating periodic arrays of other low-resistivity silicide nanocontacts on Si 1-x Ge x substrates without complex lithography.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 8712-8717 |
頁數 | 6 |
期刊 | Applied Surface Science |
卷 | 257 |
發行號 | 20 |
DOIs | |
出版狀態 | 已出版 - 1 8月 2011 |