Enhanced formation and morphological stability of low-resistivity CoSi ₂ nanodot arrays on epitaxial Si_0.7Ge_0.3 virtual substrate

Keyphrases

• Epitaxial 100%
• CoSi2 100%
• Virtual Substrate 100%
• Low Resistivity 100%
• Nanodot Array 100%
• Si0.7Ge0.3 100%
• Morphological Stability 100%
• CoSi 100%
• Formation Stability 100%
• Amorphous Si 80%
• Annealing 60%
• Nanodots 60%
• Nanosphere Lithography 40%
• Amorphization 40%
• Lithography Technique 40%
• Si Interlayer 40%
• Si1-xGex 20%
• Size Control 20%
• Periodic Array 20%
• Silicide 20%
• Annealing Temperature 20%
• Interparticle Spacing 20%
• SiOx Nanowires 20%
• Sacrificial Layer 20%
• Cobalt 20%
• Silicide Phase 20%
• Amorphous Si Thin Film 20%
• Triangular Shape 20%
• Disilicide 20%
• Nanocontact 20%
• Si Nanodots 20%

Material Science

• Morphology 100%
• Electrical Resistivity 100%
• Nanodots 100%
• Annealing 28%
• Lithography 28%
• Silicide 28%
• Nanosphere 28%
• Thin Films 14%
• Nanowire 14%
• Cobalt 14%
• Nanocontact 14%

Engineering

• Nanodots 100%
• Interlayer 28%
• Nanosphere Lithography 28%
• Thin Films 14%
• Polycrystalline 14%
• Annealing Temperature 14%
• Nanocontact 14%
• Nanowire 14%