@inproceedings{fb34de89450c40eba829fe84e8d50c8b,
title = "Enhanced Electrical Properties of AlInN/AlN/GaN Heterostructure using AlxGa1-xN/AlyGa1-yN superlattice",
abstract = "In this work, the role of an AlxGa1-xN/AlyGa1-yN superlattice (SL) layer in the buffer layer on the dislocation density and transport property of AlInN/AIN/GaN heterostructures grown on 150 mm silicon (111) substrate is investigated. It is found that the threading dislocation density in the GaN buffer strongly depends on the composition, thickness and the position of the SL layer. Electron mobility of 1,940 cm2/V-s with two dimensional electron gas density of 1.45×1013cm-2, resulting in a sheet resistance of 221 ohm/□, is achieved by using 10 pairs of Al0.2Ga0.8N/Al0.8Ga0.2N SL placed just above the thin AIN nucleation layer on Si substrate.",
keywords = "AlGaN, AllnN, Dislocation, GaN, Si, Superlattice",
author = "Chen, {Yu Chih} and Indraneel Sanyal and Chyi, {Jen Inn}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Compound Semiconductor Week, CSW 2019 ; Conference date: 19-05-2019 Through 23-05-2019",
year = "2019",
month = may,
doi = "10.1109/ICIPRM.2019.8819042",
language = "???core.languages.en_GB???",
series = "2019 Compound Semiconductor Week, CSW 2019 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 Compound Semiconductor Week, CSW 2019 - Proceedings",
}