Enhanced dopant activation and elimination of end-of-range defects in BF2+-implanted silicon-on-insulator by high-density current

H. H. Lin, S. L. Cheng, L. J. Chen, Chih Chen, K. N. Tu

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

Enhanced dopant activation and elimination of end-of-range (EOR) defects in BF2+-implanted silicon-on-insulator (SOI) have been achieved by high-density current stressing. With the high-density current stressing, the implantation amorphous silicon underwent recrystallization, enhanced dopant activation and elimination of the (EOR) defects. The current stressing method allows the complete removal of EOR defects that has not been possible with conventional thermal annealing in the processing of high-performance SOI devices.

原文???core.languages.en_GB???
頁(從 - 到)3971-3973
頁數3
期刊Applied Physics Letters
79
發行號24
DOIs
出版狀態已出版 - 10 12月 2001

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