Enabling the wide memory window and long endurance in hafnia-based FeFET from the perspective of interfacial layer

In this research, we employed AlOx and AlON thin films as interfacial layers (IL) in ferroelectric capacitors to achieve a significantly large memory window (MW) of 4.5 V and endurance up to 10⁸ cycles. By manipulating the IL materials, we obtain different intensity of voltage drop across the IL, thus changes the depolarization field in HZO, leading to increased MW. Furthermore, we integrated AlO _x /AlON into ferroelectric FETs and confirmed that AlO _x /AlON indeed enhances the threshold voltage difference (∆V _T ), while maintaining an endurance of 10⁹ cycles. this study shed light on design guidelines for large MW memory devices.