Embedded PUF on 14nm HKMG FinFET Platform: A Novel 2-bit-per-cell OTP-based Memory Feasible for IoT Secuirty Solution in 5G Era

E. R. Hsieh, H. W. Wang, C. H. Liu, Steve S. Chung, T. P. Chen, S. A. Huang, T. J. Chen, Osbert Cheng

研究成果: 書貢獻/報告類型會議論文篇章同行評審

6 引文 斯高帕斯(Scopus)

摘要

In this work, a novel concept of 2-bit-per-cell (2B/C) is introduced to realize high-density OTP PUF from a new scheme of dielectric breakdown. This PUF shows 105x of large window, good immunity to high-temperature disturbance, and excellent retention under 150°C baking, which are particularly for automotive applications. In terms of security, this PUF exhibits near ideal normal distribution of hamming distance and narrow distribution of hamming weight. The bit error rates are low, 0.78% at 25°C and 1.95% at 150°C, benchmarked on a 256-bit array. Finally, the security test of this PUF against the hackers' attack from the machine learning process has been proved to have high security. Overall, the proposed 2B/C OTP PUF demonstrated great potential for IoT security in 5G era.

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主出版物標題2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers
發行者Institute of Electrical and Electronics Engineers Inc.
頁面T118-T119
ISBN(電子)9784863487178
DOIs
出版狀態已出版 - 6月 2019
事件39th Symposium on VLSI Technology, VLSI Technology 2019 - Kyoto, Japan
持續時間: 9 6月 201914 6月 2019

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
2019-June
ISSN(列印)0743-1562

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???event.eventtypes.event.conference???39th Symposium on VLSI Technology, VLSI Technology 2019
國家/地區Japan
城市Kyoto
期間9/06/1914/06/19

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