Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory

Teng Han Huang, Po Kang Yang, Wen Yuan Chang, Jui Fen Chien, Chen Fang Kang, Miin Jang Chen, Jr Hau He

研究成果: 雜誌貢獻期刊論文同行評審

42 引文 斯高帕斯(Scopus)

摘要

Metal oxides suffering from oxygen molecule chemisorption display environment-dependent metastability, leading to unstable resistive memory characteristics and performance degradation. To obtain ambient-independent characteristics, we introduced nitrogen into ZnO resistive memory devices, compensating for the native defects and suppressing oxygen chemisorption, giving rise to a significant improvement in switching behavior without undesired surface effects. Moreover, by thermal activation of the nitrogen doping via annealing, an increased yield ratio from 50% to 82%, a reduced current compliance from 15 mA to 5 mA, and more stable cycling endurance are obtained. Our findings give physical insight into designing resistive memory devices.

原文???core.languages.en_GB???
頁(從 - 到)7593-7597
頁數5
期刊Journal of Materials Chemistry C
1
發行號45
DOIs
出版狀態已出版 - 7 12月 2013

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