Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells

T. M. Hsu; C. Y. Lai; W. H. Chang; C. C. Pan; C. C. Chuo; J. I. Chyi

doi:10.1063/1.1645994

Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells

T. M. Hsu
, C. Y. Lai
, W. H. Chang
, C. C. Pan
, C. C. Chuo
, J. I. Chyi

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

27 引文斯高帕斯（Scopus）

摘要

The polarization field in InGaN/AlInGaN quantum wells (QW) grown on GaN was investigated. The AlInGaN barrier was lattice-matched to the GaN substrate. A paraboliclike energy shift, an intensity minimum and an 180° phase change at the flat-band voltage was revealed by the bias-dependent spectra due to the quantum-confined Stark effect. The results show that the polarization field in the InGaN/AlInGaN QW is reduced significantly and is attributed to the contribution of spontaneous polarization in the quaternary barrier which compensates the piezoelectric polarization in the InGaN QWs.

原文	???core.languages.en_GB???
頁（從 - 到）	1114-1116
頁數	3
期刊	Applied Physics Letters
卷	84
發行號	7
DOIs	https://doi.org/10.1063/1.1645994
出版狀態	已出版 - 16 2月 2004

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10.1063/1.1645994

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title = "Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells",

abstract = "The polarization field in InGaN/AlInGaN quantum wells (QW) grown on GaN was investigated. The AlInGaN barrier was lattice-matched to the GaN substrate. A paraboliclike energy shift, an intensity minimum and an 180° phase change at the flat-band voltage was revealed by the bias-dependent spectra due to the quantum-confined Stark effect. The results show that the polarization field in the InGaN/AlInGaN QW is reduced significantly and is attributed to the contribution of spontaneous polarization in the quaternary barrier which compensates the piezoelectric polarization in the InGaN QWs.",

author = "Hsu, \{T. M.\} and Lai, \{C. Y.\} and Chang, \{W. H.\} and Pan, \{C. C.\} and Chuo, \{C. C.\} and Chyi, \{J. I.\}",

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T1 - Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells

AU - Hsu, T. M.

AU - Lai, C. Y.

AU - Chang, W. H.

AU - Pan, C. C.

AU - Chuo, C. C.

AU - Chyi, J. I.

PY - 2004/2/16

Y1 - 2004/2/16

N2 - The polarization field in InGaN/AlInGaN quantum wells (QW) grown on GaN was investigated. The AlInGaN barrier was lattice-matched to the GaN substrate. A paraboliclike energy shift, an intensity minimum and an 180° phase change at the flat-band voltage was revealed by the bias-dependent spectra due to the quantum-confined Stark effect. The results show that the polarization field in the InGaN/AlInGaN QW is reduced significantly and is attributed to the contribution of spontaneous polarization in the quaternary barrier which compensates the piezoelectric polarization in the InGaN QWs.

AB - The polarization field in InGaN/AlInGaN quantum wells (QW) grown on GaN was investigated. The AlInGaN barrier was lattice-matched to the GaN substrate. A paraboliclike energy shift, an intensity minimum and an 180° phase change at the flat-band voltage was revealed by the bias-dependent spectra due to the quantum-confined Stark effect. The results show that the polarization field in the InGaN/AlInGaN QW is reduced significantly and is attributed to the contribution of spontaneous polarization in the quaternary barrier which compensates the piezoelectric polarization in the InGaN QWs.

UR - https://www.scopus.com/pages/publications/1542574143

U2 - 10.1063/1.1645994

DO - 10.1063/1.1645994

M3 - 期刊論文

AN - SCOPUS:1542574143

SN - 0003-6951

VL - 84

SP - 1114

EP - 1116

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells

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