Electroreflectance studies of InAs quantum dots with Inx Ga1-x As capping layer grown by metalorganic chemical vapor deposition

W. H. Chang, Hsiang Yu Chen, H. S. Chang, W. Y. Chen, T. M. Hsu, T. P. Hsieh, J. I. Chyi, N. T. Yeh

研究成果: 雜誌貢獻期刊論文同行評審

21 引文 斯高帕斯(Scopus)

摘要

Electroreflectance spectroscopy was used to study the effect of Inx Ga1-x As capping layer on InAs quantum dots grown by metalorganic chemical vapor deposition. The optical transitions of the quantum dots and the Inx Ga1-x As capping layer were well resolved. The energy shifts in the Inx Ga1-x As capping layer show a different trend as compared to a series of referent Inx Ga1-x As quantum wells. These results support the concept of strain-driven alloy decomposition during the Inx Ga1-x As layer overgrowth.

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文章編號131917
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
86
發行號13
DOIs
出版狀態已出版 - 28 3月 2005

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