Electroreflectance studies of InAs quantum dots with Inx Ga1-x As capping layer grown by metalorganic chemical vapor deposition

W. H. Chang; Hsiang Yu Chen; H. S. Chang; W. Y. Chen; T. M. Hsu; T. P. Hsieh; J. I. Chyi; N. T. Yeh

doi:10.1063/1.1894613

Electroreflectance studies of InAs quantum dots with Inx Ga1-x As capping layer grown by metalorganic chemical vapor deposition

W. H. Chang, Hsiang Yu Chen, H. S. Chang, W. Y. Chen, T. M. Hsu, T. P. Hsieh, J. I. Chyi, N. T. Yeh

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

21 引文斯高帕斯（Scopus）

摘要

Electroreflectance spectroscopy was used to study the effect of Inx Ga1-x As capping layer on InAs quantum dots grown by metalorganic chemical vapor deposition. The optical transitions of the quantum dots and the Inx Ga1-x As capping layer were well resolved. The energy shifts in the Inx Ga1-x As capping layer show a different trend as compared to a series of referent Inx Ga1-x As quantum wells. These results support the concept of strain-driven alloy decomposition during the Inx Ga1-x As layer overgrowth.

原文	???core.languages.en_GB???
文章編號	131917
頁（從 - 到）	1-3
頁數	3
期刊	Applied Physics Letters
卷	86
發行號	13
DOIs	https://doi.org/10.1063/1.1894613
出版狀態	已出版 - 28 3月 2005

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10.1063/1.1894613

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title = "Electroreflectance studies of InAs quantum dots with Inx Ga1-x As capping layer grown by metalorganic chemical vapor deposition",

abstract = "Electroreflectance spectroscopy was used to study the effect of Inx Ga1-x As capping layer on InAs quantum dots grown by metalorganic chemical vapor deposition. The optical transitions of the quantum dots and the Inx Ga1-x As capping layer were well resolved. The energy shifts in the Inx Ga1-x As capping layer show a different trend as compared to a series of referent Inx Ga1-x As quantum wells. These results support the concept of strain-driven alloy decomposition during the Inx Ga1-x As layer overgrowth.",

author = "Chang, {W. H.} and Chen, {Hsiang Yu} and Chang, {H. S.} and Chen, {W. Y.} and Hsu, {T. M.} and Hsieh, {T. P.} and Chyi, {J. I.} and Yeh, {N. T.}",

note = "Funding Information: This work was supported by the National Science Council of the Republic of China under Grant Nos. NSC-93-2112-M-008-002 and NSC-93-2120-M-008-001, and the CNST of NCU.",

year = "2005",

month = mar,

day = "28",

doi = "10.1063/1.1894613",

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volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

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Electroreflectance studies of InAs quantum dots with Inx Ga1-x As capping layer grown by metalorganic chemical vapor deposition. / Chang, W. H.; Chen, Hsiang Yu; Chang, H. S.; Chen, W. Y.; Hsu, T. M.; Hsieh, T. P.; Chyi, J. I.; Yeh, N. T.

於: Applied Physics Letters, 卷 86, 編號 13, 131917, 28.03.2005, p. 1-3.

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

TY - JOUR

T1 - Electroreflectance studies of InAs quantum dots with Inx Ga1-x As capping layer grown by metalorganic chemical vapor deposition

AU - Chang, W. H.

AU - Chen, Hsiang Yu

AU - Chang, H. S.

AU - Chen, W. Y.

AU - Hsu, T. M.

AU - Hsieh, T. P.

AU - Chyi, J. I.

AU - Yeh, N. T.

N1 - Funding Information: This work was supported by the National Science Council of the Republic of China under Grant Nos. NSC-93-2112-M-008-002 and NSC-93-2120-M-008-001, and the CNST of NCU.

PY - 2005/3/28

Y1 - 2005/3/28

N2 - Electroreflectance spectroscopy was used to study the effect of Inx Ga1-x As capping layer on InAs quantum dots grown by metalorganic chemical vapor deposition. The optical transitions of the quantum dots and the Inx Ga1-x As capping layer were well resolved. The energy shifts in the Inx Ga1-x As capping layer show a different trend as compared to a series of referent Inx Ga1-x As quantum wells. These results support the concept of strain-driven alloy decomposition during the Inx Ga1-x As layer overgrowth.

AB - Electroreflectance spectroscopy was used to study the effect of Inx Ga1-x As capping layer on InAs quantum dots grown by metalorganic chemical vapor deposition. The optical transitions of the quantum dots and the Inx Ga1-x As capping layer were well resolved. The energy shifts in the Inx Ga1-x As capping layer show a different trend as compared to a series of referent Inx Ga1-x As quantum wells. These results support the concept of strain-driven alloy decomposition during the Inx Ga1-x As layer overgrowth.

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U2 - 10.1063/1.1894613

DO - 10.1063/1.1894613

M3 - 期刊論文

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VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

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ER -

Electroreflectance studies of InAs quantum dots with Inx Ga1-x As capping layer grown by metalorganic chemical vapor deposition

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