Electron relaxation and transport dynamics in low-temperature-grown gaas under 1 eV optical excitation

Chi Kuang Sun; Yen Hung Chen; Jin Wei Shi; Yi Jen Chiu; Kian Giap Gan; John E. Bowers

doi:10.1063/1.1595131

Electron relaxation and transport dynamics in low-temperature-grown gaas under 1 eV optical excitation

Chi Kuang Sun, Yen Hung Chen, Jin Wei Shi, Yi Jen Chiu, Kian Giap Gan, John E. Bowers

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

Electron relaxation and transport dynamics in low-temperature-grown GaAs under 1 eV optical excitation were investigated. Femtosecond transient transmission measurement and electro-optical sampling measurement in bulk samples and fabricated devices were used in the investigation. The results show that an increase in the electron lifetime can be observed when the electron density is higher than 3 × 10¹⁷ cm^-3.

原文	???core.languages.en_GB???
頁（從 - 到）	911-913
頁數	3
期刊	Applied Physics Letters
卷	83
發行號	5
DOIs	https://doi.org/10.1063/1.1595131
出版狀態	已出版 - 4 8月 2003

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10.1063/1.1595131

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abstract = "Electron relaxation and transport dynamics in low-temperature-grown GaAs under 1 eV optical excitation were investigated. Femtosecond transient transmission measurement and electro-optical sampling measurement in bulk samples and fabricated devices were used in the investigation. The results show that an increase in the electron lifetime can be observed when the electron density is higher than 3 × 1017 cm-3.",

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AU - Sun, Chi Kuang

AU - Chen, Yen Hung

AU - Shi, Jin Wei

AU - Chiu, Yi Jen

AU - Gan, Kian Giap

AU - Bowers, John E.

PY - 2003/8/4

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N2 - Electron relaxation and transport dynamics in low-temperature-grown GaAs under 1 eV optical excitation were investigated. Femtosecond transient transmission measurement and electro-optical sampling measurement in bulk samples and fabricated devices were used in the investigation. The results show that an increase in the electron lifetime can be observed when the electron density is higher than 3 × 1017 cm-3.

AB - Electron relaxation and transport dynamics in low-temperature-grown GaAs under 1 eV optical excitation were investigated. Femtosecond transient transmission measurement and electro-optical sampling measurement in bulk samples and fabricated devices were used in the investigation. The results show that an increase in the electron lifetime can be observed when the electron density is higher than 3 × 1017 cm-3.

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Electron relaxation and transport dynamics in low-temperature-grown gaas under 1 eV optical excitation

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