Electron distribution and level occupation in an ensemble of InxGa1-xAs/GaAs self-assembled quantum dots

W. H. Chang, T. M. Hsu, N. T. Yeh, J. I. Chyi

研究成果: 雜誌貢獻期刊論文同行評審

29 引文 斯高帕斯(Scopus)

摘要

We presented capacitance-voltage characteristics and electron-filling reflectance measurements to investigate electron distribution in In0.5Ga0.5As self-assembled quantum dot ensemble. First, the electronic structures of the quantum dots were constructed by capacitance-voltage profile. Coulomb charging effects on the electronic structures were also discussed. Then, the electron level occupations were investigated by the electron-filling reflectance spectra. Due to the correlated carrier transfer among the quantum dots and the n-type GaAs environment, the electron level filling is found to be inhomogeneous near the Fermi level. Finally, electron thermal population in the quantum dot levels was also investigated. The activation energies for the thermal population were found to be close to the level splitting. This means that electrons thermally populated to higher state do not require Coulomb charging energy.

原文???core.languages.en_GB???
頁(從 - 到)13040-13047
頁數8
期刊Physical Review B - Condensed Matter and Materials Physics
62
發行號19
DOIs
出版狀態已出版 - 15 11月 2000

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